Abstract In x Ga 1− x Sb (x= 0–1), a III–V ternary alloy, was grown by melt solidification
process. The effects of varying indium composition on the thermoelectric properties of In x …

ZnO films were grown onto GaSb substrates by metallic Zn thermal evaporation and
subsequent oxidation by annealing in atmospheric conditions. The evaporation times …

Tailor-made single source precursors of the type [R2GaSbR′ 2] x (R, R′= alkyl) have
been prepared by a novel synthetic pathways. According to their very low vapor pressures, a …

Electrical properties of GaSb epitaxial layers grown by the MOCVD method under various
conditions are studied. It is shown that the morphology of the layers, free-carrier …

Crystalline GaSb films were deposited using the tailor-made single-source precursor [t-
Bu2GaSbEt2] in a specifically designed MOCVD reactor under HV conditions at low …

Интерес к исследованию соединения GaSb (Eg== 0. 7 эВ) обусловлен тем, что период
кристаллической решетки GaSb близок к периоду решетки большого количества …

PHILOSOPHIAE DOCTOR Page 1 1 Atmospheric Pressure Metal-Organic Vapour Phase
Epitaxial Growth of InAs/GaSb Strained Layer Superlattices By Senzo Simo Miya Submitted in …

Diese Arbeit ist in zwei unterschiedliche Themenbereiche eingeteilt, die unabhängig
voneinander bearbeitet worden sind. Der erste Teil beschäftigt sich mit der Synthese von so …

The antimonides are potentially highly useful materials for low-power electronic-device
applications. However, unlike P and As the volatility of Sb is very low, comparable to that of …