Defect-characterized phase transition kinetics
Phase transitions are a common phenomenon in condensed matter and act as a critical
degree of freedom that can be employed to tailor the mechanical or electronic properties of …
degree of freedom that can be employed to tailor the mechanical or electronic properties of …
X-ray diffraction of III-nitrides
MA Moram, ME Vickers - Reports on progress in physics, 2009 - iopscience.iop.org
The III-nitrides include the semiconductors AlN, GaN and InN, which have band gaps
spanning the entire UV and visible ranges. Thin films of III-nitrides are used to make UV …
spanning the entire UV and visible ranges. Thin films of III-nitrides are used to make UV …
Monolayer‐thick GaN/AlN multilayer heterostructures for deep‐ultraviolet optoelectronics
Recent progress in the development of monolayer (ML)‐thick GaN/AlN multilayer
heterostructures for deep‐ultraviolet (UV) optoelectronics is reviewed. Analysis of both …
heterostructures for deep‐ultraviolet (UV) optoelectronics is reviewed. Analysis of both …
Growth, structural and optical properties of AlGaN nanowires in the whole composition range
A Pierret, C Bougerol, S Murcia-Mascaros… - …, 2013 - iopscience.iop.org
We report on the growth of Al x Ga 1− x N nanowires by plasma-assisted molecular beam
epitaxy for x in the 0.3–0.8 range. Based on a combination of macro-and micro …
epitaxy for x in the 0.3–0.8 range. Based on a combination of macro-and micro …
Mechanism leading to semi-insulating property of carbon-doped GaN: Analysis of donor acceptor ratio and method for its determination
Carbon impurities in GaN form both acceptors and donors. Donor-to-acceptor ratios (DARs)
determine the semi-insulating behavior of carbon-doped GaN (GaN: C) layers and are still …
determine the semi-insulating behavior of carbon-doped GaN (GaN: C) layers and are still …
Identification of multi-color emission from coaxial GaInN/GaN multiple-quantum-shell nanowire LEDs
K Ito, W Lu, S Katsuro, R Okuda, N Nakayama… - Nanoscale …, 2022 - pubs.rsc.org
Multi-color emission from coaxial GaInN/GaN multiple-quantum-shell (MQS) nanowire-
based light-emitting diodes (LEDs) was identified. In this study, MQS nanowire samples for …
based light-emitting diodes (LEDs) was identified. In this study, MQS nanowire samples for …
Effect of AlGaN undershell on the cathodoluminescence properties of coaxial GaInN/GaN multiple-quantum-shells nanowires
W Lu, N Sone, N Goto, K Iida, A Suzuki, DP Han… - Nanoscale, 2019 - pubs.rsc.org
Coaxial GaInN/GaN multiple-quantum-shells (MQSs) nanowires (NWs) were grown on an n-
type GaN/sapphire template employing selective growth by metal–organic chemical vapour …
type GaN/sapphire template employing selective growth by metal–organic chemical vapour …
Nonpolar AlxGa1−xN/AlyGa1−yN multiple quantum wells on GaN nanowire for UV emission
Nonpolar m-plane AlGaN offers the advantage of polarization-free multiple quantum wells
(MQWs) for ultraviolet (UV) emission and can be achieved on the sidewalls of selective area …
(MQWs) for ultraviolet (UV) emission and can be achieved on the sidewalls of selective area …
Morphology control and crystalline quality of p-type GaN shells grown on coaxial GaInN/GaN multiple quantum shell nanowires
W Lu, N Nakayama, K Ito, S Katsuro… - … Applied Materials & …, 2021 - ACS Publications
The morphology and crystalline quality of p-GaN shells on coaxial GaInN/GaN multiple
quantum shell (MQS) nanowires (NWs) were investigated using metal–organic chemical …
quantum shell (MQS) nanowires (NWs) were investigated using metal–organic chemical …
Compositional modulation and optical emission in AlGaN epitaxial films
Compositional, structural, and optical properties of molecular-beam epitaxy grown Al x Ga
1− x N films were characterized by transmission electron microscopy (TEM), x-ray diffraction …
1− x N films were characterized by transmission electron microscopy (TEM), x-ray diffraction …