Selected failure mechanisms of modern power modules
M Ciappa - Microelectronics reliability, 2002 - Elsevier
This paper reviews the main failure mechanisms occurring in modern power modules
paying special attention to insulated gate bipolar transistor devices for high-power …
paying special attention to insulated gate bipolar transistor devices for high-power …
Current status and perspectives of ultrahigh-voltage SiC power devices
T Kimoto, Y Yonezawa - Materials Science in Semiconductor Processing, 2018 - Elsevier
Recent progress in the SiC material and ultrahigh-voltage devices is reviewed. Regarding
the material issues, fast epitaxial growth of high-purity epitaxial layers and reduction of basal …
the material issues, fast epitaxial growth of high-purity epitaxial layers and reduction of basal …
IGBT history, state-of-the-art, and future prospects
N Iwamuro, T Laska - IEEE Transactions on Electron Devices, 2017 - ieeexplore.ieee.org
An overview on the history of the development of insulated gate bipolar transistors (IGBTs)
as one key component in today's power electronic systems is given; the state-of-the-art …
as one key component in today's power electronic systems is given; the state-of-the-art …
[图书][B] Insulated gate bipolar transistor IGBT theory and design
VK Khanna - 2004 - books.google.com
Page 1 THE INSULATED GATE BIPOLAR TRANSISTOR IGBT THEORY AND DESIGN Vinod
Kumar Khanna IEEE IEEE PRESS WILEYINTERSCIENCE A JOHN WILEY & SONS, INC …
Kumar Khanna IEEE IEEE PRESS WILEYINTERSCIENCE A JOHN WILEY & SONS, INC …
Oscillation effects in IGBT's related to negative capacitance phenomena
I Omura, W Fichtner, H Ohashi - IEEE transactions on Electron …, 1999 - ieeexplore.ieee.org
Insulated gate bipolar transistors (IGBT's) are inherently unstable at high collector voltages
due to negative gate capacitance values. We investigate IGBT gate voltage oscillations by …
due to negative gate capacitance values. We investigate IGBT gate voltage oscillations by …
Analytical modeling of IGBTs: Challenges and solutions
BJ Baliga - IEEE Transactions on Electron Devices, 2012 - ieeexplore.ieee.org
With the availability of advanced computing capability, it is fashionable to analyze and
design insulated-gate bipolar transistors (IGBTs) using sophisticated 2-D and 3-D numerical …
design insulated-gate bipolar transistors (IGBTs) using sophisticated 2-D and 3-D numerical …
Behavioral study of single-event burnout in power devices for natural radiation environment applications
M Zerarka, P Austin, G Toulon… - … on Electron Devices, 2012 - ieeexplore.ieee.org
Two-dimensional numerical simulations have been performed to define the sensitive volume
and triggering criteria of single-event burnouts (SEBs) for standard and superjunction …
and triggering criteria of single-event burnouts (SEBs) for standard and superjunction …
An experimental and numerical study on the forward biased SOA of IGBTs
H Hagino, J Yamashita, A Uenishi… - IEEE Transactions on …, 1996 - ieeexplore.ieee.org
Thermal and electrical destructions of n-ch 600 V punchthrough type IGBTs in FB SOA are
investigated by experiments and simulations, The cause of the thermal destruction is the …
investigated by experiments and simulations, The cause of the thermal destruction is the …
[PDF][PDF] Some reliability aspects of IGBT modules for high-power applications
MPM Ciappa - 2000 - research-collection.ethz.ch
The assurance that a technical system will perform its intended function for the required
duration and within a given environment requires a variety of engineering activities to be …
duration and within a given environment requires a variety of engineering activities to be …
Low on-resistance wide band gap semiconductor device and method for producing the same
N Iwamuro - US Patent 8,564,028, 2013 - Google Patents
2010-04-20 Assigned to FUJI ELECTRIC SYSTEMS CO., LTD. reassignment FUJI
ELECTRIC SYSTEMS CO., LTD. ASSIGNMENT OF ASSIGNORS INTEREST (SEE …
ELECTRIC SYSTEMS CO., LTD. ASSIGNMENT OF ASSIGNORS INTEREST (SEE …