Recent progress on negative capacitance tunnel FET for low-power applications: Device perspective
In the present-day scenario of low-power electronics, there is a steady and increasing need
for an adequate device that can counteract the power dissipation issue due to the consistent …
for an adequate device that can counteract the power dissipation issue due to the consistent …
Negative capacitance field effect transistors based on van der Waals 2D materials
RS Chen, Y Lu - Small, 2024 - Wiley Online Library
Steep subthreshold swing (SS) is a decisive index for low energy consumption devices.
However, the SS of conventional field effect transistors (FETs) has suffered from Boltzmann …
However, the SS of conventional field effect transistors (FETs) has suffered from Boltzmann …
Investigation of self-heating effects in vertically stacked GAA MOSFET with wrap-around contact
A contact resistance () becomes a major parasitic resistance in highly scaled modern
semiconductor devices. A wrap-around contact (WAC) has been suggested as a promising …
semiconductor devices. A wrap-around contact (WAC) has been suggested as a promising …
Design and performance assessment of a vertical feedback FET
This paper proposes the structure of a vertical PNPN single gated feedback field-effect
transistor (vertical FBFET) and investigates its performance using a TCAD simulator. The …
transistor (vertical FBFET) and investigates its performance using a TCAD simulator. The …
Performance assessment of dielectrically modulated negative capacitance germanium source vertical tunnel FET biosensor for detection of breast cancer cell lines
K Vanlalawmpuia, P Ghosh - AEU-International Journal of Electronics and …, 2023 - Elsevier
The paper presents a dielectrically modulated negative capacitance Germanium source
vertical tunnel FET (DM-NC-Ge-vTFET) biosensor for detection of non-tumorigenic breast …
vertical tunnel FET (DM-NC-Ge-vTFET) biosensor for detection of non-tumorigenic breast …
Steep-subthreshold slope dual gate negative capacitance junction less FET with dead channel: TCAD approach for digital/RF applications
In pursuit of lowering power densities and reducing energy efficiency constraints, execution
grid of arising electronic devices are being investigated to track down alternative options for …
grid of arising electronic devices are being investigated to track down alternative options for …
Analytical model of subthreshold drain current for nanoscale negative capacitance junctionless FinFET
In this article, an analytical Subthreshold Drain Current model has been developed for
Negative Capacitance Junctionless FinFET (NC-JL FinFET). To obtain the subthreshold …
Negative Capacitance Junctionless FinFET (NC-JL FinFET). To obtain the subthreshold …
Analytical compact model of nanowire junctionless gate-all-around MOSFET implemented in verilog-a for circuit simulation
In the present research article, we have proposed an analytical compact model for nanowire
Junctionless Gate-All-Around (JLNGAA) MOSFET validated in all transistor's operation …
Junctionless Gate-All-Around (JLNGAA) MOSFET validated in all transistor's operation …
A review on emerging tunnel FET structures for high-speed and low-power circuit applications
Tunnel FET is found to be a prominent candidate to address the various issues like short
channel effects, thermionic limitation, which are dominant in MOSFET. It has grabbed the …
channel effects, thermionic limitation, which are dominant in MOSFET. It has grabbed the …
More-than-moore steep slope devices for higher frequency switching applications: a designer's perspective
The progress in IC miniaturization dictated by Moore's Law has taken a leap from mere
circuit integration to IoT enabled System-on-Chip (SoC) deployments. Such systems are …
circuit integration to IoT enabled System-on-Chip (SoC) deployments. Such systems are …