Performance improvement of GaAsSb/InGaAs DQW heterostructure by uni-and bi-axial pressure and field for IR-photodetector application
In this article, we report that the performance of GaAsSb/InGaAs double quantum well
(DQW) heterostructure, which is useful in designing the infrared (IR) photodetectors, can be …
(DQW) heterostructure, which is useful in designing the infrared (IR) photodetectors, can be …
Designing of type-I AlN/GaN/InAlN quantum well heterostructure and investigating its optical characteristics
This paper reports quantum mechanical study to optimize the type-I AlN/GaN/InAlN QW
(quantum well) heterostructure and investigates the optical gain characteristics. The …
(quantum well) heterostructure and investigates the optical gain characteristics. The …
Effect of quantum well thickness on band dispersion and optical matrix elements of type-II In0.7Ga0.3As/GaAs0.4Sb0.6 heterostructure
A Kumari, M Riyaj, RK Mishra - Optical and Quantum Electronics, 2023 - Springer
Theoretical analysis of the effect of quantum well thickness on the energy band dispersion
curve, matrix elements, transition energy, optical gain, and transition wavelength of the type …
curve, matrix elements, transition energy, optical gain, and transition wavelength of the type …
Survey of Nanosensors and Nano-heterostructures
In this paper, we have studied various types of sensors like chemical sensors,
electrochemical sensors, biosensors, optical sensors, and mass-sensitive sensors. These …
electrochemical sensors, biosensors, optical sensors, and mass-sensitive sensors. These …
[HTML][HTML] Optical gain calculation and structure optimization of type-II GaAsSb/InAs/InGaAs quantum well heterostructures
XZ Zhou, CC Du, G Bi - AIP Advances, 2023 - pubs.aip.org
This paper reports an optimization scheme of type-II GaAsSb/InAs/InGaAs quantum wells
using the six bands k· p method. By calculating the optical gain, the optimal structures of the …
using the six bands k· p method. By calculating the optical gain, the optimal structures of the …
Effect of Quantum Well Width on Optical Gain in Type-II GAP/GAPSB/GAASSB Nanoscale Heterostructure for IR Optoelectronics
P Chaudhary, A Rathi - … Conference on Emerging Applications of Material …, 2024 - Springer
III-V semiconductor compound-based W-shaped type-II GaP/GaP0. 5Sb0. 5/GaAs0. 16Sb0.
84 nanoscale heterostructure is investigated under different well widths at 300 K. The optical …
84 nanoscale heterostructure is investigated under different well widths at 300 K. The optical …
[PDF][PDF] Process sequence optimization and structural analysis of nanoscale heterostructure using compound semiconductors AlAsSb/In0. 59Ga0. 41As/GaAs0. 53Sb0 …
J Vijay, D Bharadwaj, A Rathi - International Journal of Advanced …, 2023 - academia.edu
Process sequence optimization and structural analysis of nanoscale heterostructure using
compound semiconductors AlAsSb/In0.59Ga Page 1 International Journal of Advanced …
compound semiconductors AlAsSb/In0.59Ga Page 1 International Journal of Advanced …
III & V Group Elements and Heterostructures for Optoelectronics: A Survey
J Jain, A Rathi, P Chaudhary - … on Flexible Electronics for Electric Vehicles, 2022 - Springer
III–V semiconductors have a lot of promise for new optoelectronic applications. A survey of
different research led us to that heterostructure devices are framed by the thin film deposition …
different research led us to that heterostructure devices are framed by the thin film deposition …