GaAsP/SiGe tandem solar cells on porous Si substrates
P Caño, M Hinojosa, I García, R Beanland, DF Marrón… - Solar Energy, 2021 - Elsevier
III-V compound semiconductors and SiGe alloys can be combined to develop multijunction
solar cells on Silicon substrates with optimum bandgap combinations. Current …
solar cells on Silicon substrates with optimum bandgap combinations. Current …
[HTML][HTML] Nature of contaminants introduced in silicon wafers during molecular beam epitaxy chamber annealing
Epitaxial monolithic III–V/Si tandem solar cells are one of the most promising technologies to
be adopted by the industry after the efficiency of the current market dominating single …
be adopted by the industry after the efficiency of the current market dominating single …
A route to obtaining low-defect III–V epilayers on Si (100) utilizing MOCVD
Low-defect III–V multilayer structures grown on Si (100) open opportunities for a wide range
of cost-effective high-performance photovoltaic and optoelectronic devices. For that,(Al) GaP …
of cost-effective high-performance photovoltaic and optoelectronic devices. For that,(Al) GaP …
Reduction of crystalline defects in III-V thin buffer layers grown on Si (100) and Ge (100) substrates by MOCVD for solar fuels
M Nandy - 2023 - db-thueringen.de
Die Heteroepitaxie von III-V auf Si und Ge Substraten eignet sich für kostengünstige,
qualitativ hochwertige Epitaxieschichten, die eine geeignete Bandlücke für …
qualitativ hochwertige Epitaxieschichten, die eine geeignete Bandlücke für …
Towards a III-V solar cell with a metamorphic graded buffer directly grown on v-groove Si substrates
V-groove Si substrates offer a promising route for the direct growth of III-V solar cells on low-
cost, photovoltaic-grade Si. In this work, we develop a method for coalescing GaP nucleated …
cost, photovoltaic-grade Si. In this work, we develop a method for coalescing GaP nucleated …
The Electronic Properties of Defects in Silicon Solar Cells
Z Zhou - 2022 - unsworks.unsw.edu.au
This thesis is concerned with the measurements and interpretation of the electronic
properties of defects in high-efficiency silicon solar cells. In broad terms, defects in …
properties of defects in high-efficiency silicon solar cells. In broad terms, defects in …
Reducing the dependence of threading dislocation density on doping for GaAsP/GaP on Si
RD Hool, BD Li, Y Sun, P Dhingra… - 2021 IEEE 48th …, 2021 - ieeexplore.ieee.org
We compare~ 1.7 eV GaAsP top cells grown on GaP/Si templates with different GaAs y P 1-
y/GaP buffer layer doping, either unintentionally-doped (UID) or Si-doped (n-type). Unlike …
y/GaP buffer layer doping, either unintentionally-doped (UID) or Si-doped (n-type). Unlike …
Desarrollo de células solares multiunión de semiconductores del grupo III-V sobre sustratos de silicio
P Caño Fernández - 2020 - oa.upm.es
El mundo de la energía solar fotovoltaica ha estado dominado por el silicio durante
décadas, gracias a la abundancia de este elemento en la corteza terrestre y sus bajos …
décadas, gracias a la abundancia de este elemento en la corteza terrestre y sus bajos …