We present the mean-time-to-failure (MTTF) calculations for AlGaN/GaN high-electron-
mobility transistors (HEMTs) using two independent acceleration factors. MTTF predictions …

The potential profiles, work functions, and Schottky barriers of aluminum films with the ideal
vacuum/Al (111)/SiO 3 and vacuum/Al (111)/Al 2 O 3 interfaces and the SiO 2/Al (111)/Al 2 O …

An optimization‐based method allowing a straightforward extraction of scalable small‐signal
equivalent‐circuit models for high‐frequency active devices is proposed. The approach only …

A compact aperture coupled patch type microstrip-to-waveguide transition at V-band is
proposed and fabricated using LTCC (Low Temperature Co-fired Ceramic) process. It uses …

The design of broadband low noise amplifiers (LNAs) for reconfigurable and real-time multi-
standard multiband RF/microwave transceiver requires a holistic design trade-off for a given …

A scalable HEMT noise model has been developed, based on a lumped parasitic network
extracted analytically through full-wave electromagnetic simulations and a scalable black …

In this paper, the implementations of a 0.1 µm gallium arsenide (GaAs) pseudomorphic high
electron mobility transistor process for a low noise amplifier (LNA), a subharmonically …

We studied how the passive intermodulation (PIM) power arising in air cavity filters could be
calculated and how the design of the filter could be optimized in order to reduce the …

Improvement on the RF and noise performance for 80nm InAs/In0. 7Ga0. 3As high-electron
mobility transistor (HEMT) through gate sinking technology is presented. After gate sinking at …

A compact aperture coupled patch type microstrip‐to‐waveguide transition at V‐band is
proposed and fabricated using low‐temperature cofired ceramic process. It uses the …