Abstract Two-dimensional (2D) materials offer opportunities to explore both fundamental
science and applications in the limit of atomic thickness. Beyond the prototypical case of …

Photodetectors are one of the most important components for a future “Internet-of-Things”
information society. Compared to the mainstream semiconductor-based photodetectors …

Two-dimensional (2D) transition metal dichalcogenides (TMDs) have emerged as highly
promising candidates for next-generation electronics owing to their atomically thin structures …

Improving the electric transport of field-effect transistors based on heterostructure (HTS) is a
stern challenge by the reduction of the interfacial barrier. Herein, the electronic properties of …

High contact resistance (RC) between 3D metallic conductors and single-layer 2D
semiconductors poses major challenges toward their integration in nanoscale electronic …

Atomically thin graphene has attracted immense attention as a future transparent electrode
for flat-panel displays owing to its excellent conductivity, optical transparency, and flexibility …

Abstract 2D materials offer a pathway for further scaling of CMOS technology. However, for
this to become a reality, both n-MOS and p-MOS should be realized, ideally with the same …

Two-dimensional (2D) semiconductors have been considered as promising candidates to
fabricate ultimately scaled field-effect transistors (FETs), due to the atomically thin thickness …

Tungsten diselenide (WSe 2) has emerged as a promising ambipolar semiconductor
material for field-effect transistors (FETs) due to its unique electronic properties, including a …

Implementing two-dimensional materials in field-effect transistors (FETs) offers the
opportunity to continue the scaling trend in the complementary metal-oxide-semiconductor …