Experimental investigations of state-of-the-art 650-V class power MOSFETs for cryogenic power conversion at 77K
Y Chen, XY Chen, T Li, YJ Feng, Y Liu… - IEEE Journal of the …, 2017 - ieeexplore.ieee.org
With consideration of both the operating properties from cryogenic MOSFETs and
refrigerating costs from cryogenic refrigerators, this paper attempts to carry out the …
refrigerating costs from cryogenic refrigerators, this paper attempts to carry out the …
Comparative study of gallium nitride and silicon carbide MOSFETs as power switching applications under cryogenic conditions
SM Abd El-Azeem, SM El-Ghanam - Cryogenics, 2020 - Elsevier
The operation of power switching systems based on Gallium Nitride (GaN) and Silicon
Carbide (SiC) metal oxide field effect transistors (MOSFETs) were presented under the …
Carbide (SiC) metal oxide field effect transistors (MOSFETs) were presented under the …
An investigation into the utilisation of power MOSFETs at cryogenic temperatures to achieve ultra-low power losses
KK Leong, BT Donnellan, AT Bryant… - 2010 IEEE Energy …, 2010 - ieeexplore.ieee.org
The cryogenic behaviour of five 200 V rated HEXFET® MOSFETs between the temperatures
of 20 K to 100 K are presented, including the on-state resistances, breakdown voltages and …
of 20 K to 100 K are presented, including the on-state resistances, breakdown voltages and …
Power MOSFET operation at cryogenic temperatures: Comparison between HEXFET®, MDMeshTM and CoolMOSTM
KK Leong, AT Bryant, PA Mawby - 2010 22nd International …, 2010 - ieeexplore.ieee.org
Previous studies have measured conventional power MOSFET [1] and IGBT [2] operation
down to the temperature of 4.2 K. However, super-junction (SJ) devices such as CoolMOS™ …
down to the temperature of 4.2 K. However, super-junction (SJ) devices such as CoolMOS™ …
Steady-state over-current safe operation area (SOA) of the SiC MOSFET at cryogenic and room temperatures
The over-current withstanding ability of the silicon carbide (SiC) based metal–
oxidesemiconductor field effect transistor (MOSFET) is really important for the survival during …
oxidesemiconductor field effect transistor (MOSFET) is really important for the survival during …
Exploring Intertwined quantum and cryogenic behaviour in ultra-scaled 10 nm MOSFET: a NEGF quantum ballistic simulation
Silicon-based spin qubits have emerged as promising candidates for scalable quantum
information processing. This study first time investigates the behaviour of ultra-scaled 10 nm …
information processing. This study first time investigates the behaviour of ultra-scaled 10 nm …
Evaluation of semiconductor losses in cryogenic DC-DC converters
C Jia, AJ Forsyth - 2006 CES/IEEE 5th International Power …, 2006 - ieeexplore.ieee.org
A detailed experimental evaluation is reported of DC-DC power electronic converters
operating at cryogenic temperatures; the motivation for the study being the eventual …
operating at cryogenic temperatures; the motivation for the study being the eventual …
Optimized use of superconducting magnetic energy storage for electromagnetic rail launcher powering
Electromagnetic rail launchers (EMRLs) require very high currents, from hundreds of kA to
several MA. They are usually powered by capacitors. The use of superconducting magnetic …
several MA. They are usually powered by capacitors. The use of superconducting magnetic …
Investigation of power MOSFET switching at cryogenic temperatures
M Giesselmann, Z Mahund… - Proceedings of 1996 …, 1996 - ieeexplore.ieee.org
Operation of power MOSFETs (metal oxide semiconductor field effect transistor) at cryogenic
temperatures significantly reduces conduction losses and increases power handling …
temperatures significantly reduces conduction losses and increases power handling …
Behaviour of IGBT Modules in the Temperature Range from 5 to 300 K
F Rosenbauer, HW Lorenzen - Advances in Cryogenic Engineering: Part A, 1996 - Springer
The behaviour of insulated gate bipolar transistors (IGBT) in cryogenic environment was
investigated. The test program covered IGBT modules rated for 300–500 A in single and …
investigated. The test program covered IGBT modules rated for 300–500 A in single and …