MoS2 Field-Effect Transistor with Sub-10 nm Channel Length
Atomically thin molybdenum disulfide (MoS2) is an ideal semiconductor material for field-
effect transistors (FETs) with sub-10 nm channel lengths. The high effective mass and large …
effect transistors (FETs) with sub-10 nm channel lengths. The high effective mass and large …
MoS2/WO3 Nanosheets for Detection of Ammonia
This article demonstrates the use of a p-MoS2/n-WO3 heterojunctions based ultra sensitive
and selective chemiresistive ammonia sensor that operates at 200◦ C. Surprisingly, the …
and selective chemiresistive ammonia sensor that operates at 200◦ C. Surprisingly, the …
MoSe2 Crystalline Nanosheets for Room-Temperature Ammonia Sensing
We report a highly sensitive and selective ammonia (NH3) gas sensor made from liquid
exfoliated MoSe2 nanosheets. The powder obtained after exfoliation was used to make a …
exfoliated MoSe2 nanosheets. The powder obtained after exfoliation was used to make a …
Reconfiguring crystal and electronic structures of MoS2 by substitutional doping
Doping of traditional semiconductors has enabled technological applications in modern
electronics by tailoring their chemical, optical and electronic properties. However …
electronics by tailoring their chemical, optical and electronic properties. However …
High-throughput discovery of high Curie point two-dimensional ferromagnetic materials
Databases for two-dimensional materials host numerous ferromagnetic materials without the
vital information of Curie temperature since its calculation involves a manually intensive …
vital information of Curie temperature since its calculation involves a manually intensive …
Synthesis of lateral heterostructure of 2D materials for optoelectronic devices: challenges and opportunities
In the increasing demands for exotic device development in the fields of electronics,
optoelectronics, sensors, energy, integrated circuits, and quantum technologies, 2D …
optoelectronics, sensors, energy, integrated circuits, and quantum technologies, 2D …
High-throughput design of functional-engineered MXene transistors with low-resistive contacts
Two-dimensional material-based transistors are being extensively investigated for CMOS
(complementary metal oxide semiconductor) technology extension; nevertheless …
(complementary metal oxide semiconductor) technology extension; nevertheless …
Stability of direct band gap under mechanical strains for monolayer MoS2, MoSe2, WS2 and WSe2
Single layer transition-metal dichalcogenides materials (MoS 2, MoSe 2, WS 2 and WSe 2)
are investigated using the first-principles method with the emphasis on their responses to …
are investigated using the first-principles method with the emphasis on their responses to …
Low Contact Barrier in 2H/1T′ MoTe2 In-Plane Heterostructure Synthesized by Chemical Vapor Deposition
Metal–semiconductor contact has been a critical topic in the semiconductor industry
because it influences device performance remarkably. Conventional metals have served as …
because it influences device performance remarkably. Conventional metals have served as …
Defect Dynamics in 2-D MoS2 Probed by Using Machine Learning, Atomistic Simulations, and High-Resolution Microscopy
Structural defects govern various physical, chemical, and optoelectronic properties of two-
dimensional transition-metal dichalcogenides (TMDs). A fundamental understanding of the …
dimensional transition-metal dichalcogenides (TMDs). A fundamental understanding of the …