Major features of silicon carbide (SiC) power devices include high blocking voltage, low on-
state loss, and fast switching, compared with those of the Si counterparts. Through recent …

Power semiconductor devices are key components in power conversion systems. Silicon
carbide (SiC) has received increasing attention as a wide-bandgap semiconductor suitable …

Silicon carbide (SiC) is a wide bandgap semiconductor having high critical electric field
strength, making it especially attractive for high-power and high-temperature devices …

In the last ten years, large improvements in the epitaxial silicon carbide processes have
been made. The introduction of chloride precursors, the epitaxial growth on large area …

We investigated the dependency of minority carrier lifetimes on the nitrogen concentration,
temperature, and the injected carrier concentration for highly nitrogen-doped 4H-SiC …

This paper surveys extended defects in 4H‐SiC epilayers and reports recent results
concerning fast epitaxial growth. Synchrotron X‐ray topography, transmission electron …

Silicon carbide (SiC) is a fascinating material. In one way, it is very simple; there are only two
atoms building up the crystal—silicon and carbon, where each atom is sp3-hybridized and …

SiC bipolar degradation, which is caused by stacking fault expansion from basal plane
dislocations in a SiC epitaxial layer or near the interface between the epitaxial layer and the …

Abstract 4H-SiC has been commercialized as a material for power semiconductor devices.
However, the long-term reliability of 4H-SiC devices is a barrier to their widespread …

This paper reports recent advances in high-quality 4H-SiC epitaxial growth. The modern 4H-
SiC epitaxial reactors, techniques to improve growth rates and large-diameter uniformity and …