The continuous down-scaling of transistors has been the key to the successful development
of current information technology. However, with Moore's law reaching its limits, the …

In this paper, we consider devices, circuits, and systems comprised of transistors with
integrated ferroelectrics. Said structures are actively being considered by various …

Room-temperature Fermi–Dirac electron thermal excitation in conventional three-
dimensional (3D) or two-dimensional (2D) semiconductors generates hot electrons with a …

In this paper, an N-type silicon line tunneling TFET (LT-TFET) with an ultra-shallow N+
pocket was proposed. The pocket was formed by using the germanium preamorphization …

The continuous progress in the development of tunnel field-effect transistors (TFETs) by
replacing the conventional metal-oxide field-effect transistors is to satisfy the development of …

We report a temperature independent subthreshold slope (SS) of∼ 47 mV/dec at low
temperature in a triple top gate graphene tunnel field-effect transistor (TFET). The outer …

Transistor downscaling by Moore's law has facilitated drastic improvements in information
technology, but this trend cannot continue because power consumption issues have pushed …

All electronic devices when used in a radiation environment undergo significant changes in
their electrical properties. It is interesting to explore the effects of radiation, not only on …

Developing low-power FETs holds significant importance in advancing logic circuits,
especially as the feature size of MOSFETs approaches sub-10 nanometers. However, this …

In the present work, a high-k dielectric hafnium dioxide and lead zirconate titanate (PZT)
have been incorporated as a ferroelectric (FE) layer in the gate stack. The I on/I off ratio …