III–V multijunction solar cell integration with silicon: Present status, challenges and future outlook

N Jain, MK Hudait - Energy Harvesting and Systems, 2014 - degruyter.com
Achieving high-efficiency solar cells and at the same time driving down the cell cost has
been among the key objectives for photovoltaic researchers to attain a lower levelized cost …

A review of concentrator silicon solar cells

Y Xing, P Han, S Wang, P Liang, S Lou, Y Zhang… - … and Sustainable Energy …, 2015 - Elsevier
The problems of worldwide energy shortage and environment pollution are becoming more
and more serious, thus lots of attention has been paid to renewable and sustainable energy …

Direct growth of GaAs solar cells on Si substrate via mesoporous Si buffer

ABP Mbeunmi, M El-Gahouchi, R Arvinte… - Solar Energy Materials …, 2020 - Elsevier
Abstract Due to Silicon (Si) material abundance and lower cost, integration of high efficiency
III-V solar cells on Si substrates is of major importance for future solar energy harvesting …

Tandem GaAsP/SiGe on Si solar cells

M Diaz, L Wang, D Li, X Zhao, B Conrad… - Solar Energy Materials …, 2015 - Elsevier
GaAsP/SiGe dual-junction solar cells have been epitaxially grown on silicon substrates
which have the potential of achieving 1-sun tandem efficiencies of 40%. With the addition of …

Accommodation of SiGe strain on a universally compliant porous silicon substrate

I Berbezier, JN Aqua, M Aouassa, L Favre, S Escoubas… - Physical Review B, 2014 - APS
The growth of heteroepitaxial planar fully strained SiGe layers with high Ge concentration
and large thickness enables tailoring electronic properties for enhanced transport properties …

A porous Ge/Si interface layer for defect-free III-V multi-junction solar cells on silicon

YA Bioud, MN Beattie, A Boucherif… - Physics, Simulation …, 2019 - spiedigitallibrary.org
III-V solar cell cost reduction and direct III-V/Si integration can both be realized by depositing
a thin layer of high-quality Ge on relatively low-cost Si substrates. However, direct epitaxial …

[HTML][HTML] Efficient tool flow for 3D photovoltaic modelling

T Rahman, K Fobelets - Computer Physics Communications, 2015 - Elsevier
Performance predictions and optimisation strategies in current nanotechnology-based
photovoltaic (PV) require simulation tools that can efficiently and accurately compute optical …

Ge growth on porous silicon: The effect of buffer porosity on the epilayer crystalline quality

G Calabrese, S Baricordi, P Bernardoni… - Applied Physics …, 2014 - pubs.aip.org
We report on the epitaxial growth of Ge virtual substrates directly on Si (001) and on different
porosity porous silicon (pSi) buffers. Obtained results indicate that Ge grown on low porosity …

Effects of luminescent coupling in single-and 4-junction dilute nitride solar cells

MM Wilkins, AM Gabr, AH Trojnar… - 2014 IEEE 40th …, 2014 - ieeexplore.ieee.org
A novel method for incorporating the effects of luminescent coupling and photon recycling in
numerical simulations of planar devices is described. The carrier generation is incorporated …

Numerical simulation and performance measure of highly efficient GaP/InP/Si multi‐junction solar cell

P Sathya, R Natarajan - International Journal of Energy …, 2017 - Wiley Online Library
A novel multi‐junction GaP/InP/Si solar cells with improved p++ AlGaAs/n++ AlGaAs tunnel
junction model is designed using the Synopsys/RSoft/Solar cell utility software. The optical …