High thermoelectric performance induced by strong anharmonic effects in monolayer (PbX) 2 (X= S, Se, Te)

PZ Jia, ZX Xie, YX Deng, Y Zhang, LM Tang… - Applied Physics …, 2022 - pubs.aip.org
Enhanced thermoelectric performance is restricted greatly by the interaction of various
transport parameters, and this bottleneck urgently requires a solution. In this paper, first …

C568: A new two-dimensional sp2-sp3 hybridized allotrope of carbon

B Ram, H Mizuseki - Carbon, 2020 - Elsevier
Using first-principles calculations, we designed a new two-dimensional sp 2− sp 3
hybridized allotrope of carbon. This allotrope is made up of 5-6-8 carbon rings thus, known …

Strain-induced indirect-to-direct band-gap transition in bulk

B Ram, AK Singh - Physical Review B, 2017 - APS
While SnS 2 is an earth-abundant large-band-gap semiconductor material, the indirect
nature of the band gap limits its applications in light harvesting or detection devices. Here …

Carbon-doping-induced energy-band modification and vacancies in SnS 2 nanosheets for room-temperature ppb-level NO 2 detection

R Wu, J Hao, T Wang, S Zheng, Y Wang - Inorganic Chemistry …, 2021 - pubs.rsc.org
The two-dimensional layered metal dichalcogenides (LMDs) SnS2 is an interesting
candidate for high-performance NO2 gas sensors. However, most SnS2-based NO2 sensors …

Anisotropic phonon transport and lattice thermal conductivities in tin dichalcogenides SnS 2 and SnSe 2

H Wang, Y Gao, G Liu - RSC advances, 2017 - pubs.rsc.org
In recent years, layered semiconductor tin dichalcogenides, SnX2 (X= S and Se), have
received great attention owing to their wide applications in numerous fields. However …

Strain engineering to facilitate the occurrence of 2D ferroelectricity in CuInP2S6 monolayer

ZZ Sun, W Xun, L Jiang, JL Zhong… - Journal of Physics D …, 2019 - iopscience.iop.org
Off-plane polarization in two dimensional materials is significant during the designation of
functional nano-devices. As a prototype, the metal chalcogen-diphosphate CuInP 2 S 6 …

Terahertz emission from in-plane and out-of-plane dipoles in layered SnS2 crystal

Z Lei, Y Huang, Z Fan, W Du, C He, H Wang… - Applied Physics …, 2020 - pubs.aip.org
We investigated the terahertz (THz) radiation mechanism of the layered tin sulfide (SnS 2)
crystal via THz emission spectroscopy. Under non-resonant excitation, THz generation from …

Effect of S Vacancy and Interlayer Interaction on the Electronic and Optical Properties of MoS2/WSe2 Heterostructure

X Zhen, H Liu, F Liu, S Zhang, J Zhong… - Journal of Electronic …, 2023 - Springer
The van der Waals (vdWs) heterostructure retains some excellent properties of monolayer
transition metal dichalcogenides (TMDs), and has a significant improvement in performance …

Possible indirect to direct bandgap transition in SnS2 via nickel doping

B Sainbileg, M Hayashi - Chemical Physics, 2019 - Elsevier
Direct bandgap semiconductors play a critical role in optoelectronics. In this regard, SnS 2 is
a two-dimensional (2D) layered semiconductor which has ignited intensive attention due to …

Superconductivity in the van der Waals crystal up to 105 GPa

B Yue, W Zhong, X Yu, F Hong - Physical Review B, 2022 - APS
The manipulation of electronic properties in layered materials is of great importance for both
device design and fundamental research. Here, we report the pressure engineering on Sn S …