The number of memory faults operating in radiation environments increases with the
electronic device miniaturization. One-dimensional (1D) Error Correction Codes (ECCs) are …

Advances in integrated circuit production technologies have reduced device sizes, leading
to corresponding scaling in electrical characteristics, such as threshold voltage. This scaling …

Branch prediction structures are increasingly used in space processors due to their crucial
role in improving processor performance. Due to radiation effects such as Single Event …

The diversity of nanosatellite applications is increasingly attracting the scientific community's
attention. The main component of these satellites is the OnBoard Computer (OBC), which is …

Severe conditions such as high-energy particle strikes may induce soft errors in on-chip
memory, like cache and translation lookaside buffers (TLBs). As the key component of virtual …

The integrated circuit shrinkage increases the probability and the number of errors in
memories due to the increase in the sensitivity to electromagnetic radiation. Critical …

The shrinking of memory devices increased the probability of system failures due to the
higher sensitivity to electromagnetic radiation. Critical memory systems employ fault-tolerant …

The increasing vulnerability of memory devices to errors due to smaller transistor sizes,
larger densities, and lower operating voltages raises the demand for efficient Error …

The shrinkage of electronic devices increases the probability of memory error due to the
rising sensitivity to radiation; memories targeting critical applications employ Error …

The advancement of semiconductor technology has significantly increased data density,
enabling the storage and processing of vast amounts of information. However, this higher …