Research progress on porous low dielectric constant materials
M Xie, M Li, Q Sun, W Fan, S Xia, W Fu - Materials Science in …, 2022 - Elsevier
With the rapid development of ultra-large-scale integration (ULSI) of integrated circuits, the
feature size of the silicon chip continues shrinking and the physical gate length is …
feature size of the silicon chip continues shrinking and the physical gate length is …
Ultralow‐k Amorphous Boron Nitride Based on Hexagonal Ring Stacking Framework for 300 mm Silicon Technology Platform
CM Lin, CH Hsu, WY Huang, V Astie… - Advanced Materials …, 2022 - Wiley Online Library
The implementation of ultralow dielectric constant (k value≈ 2) materials to reduce signal
propagation delay in advanced electronic devices represents a critical challenge in next …
propagation delay in advanced electronic devices represents a critical challenge in next …
Influence of HF acid catalyst concentration on properties of aerogel low-k thin films
AS Gaikwad, SA Gupta… - Materials Research …, 2016 - iopscience.iop.org
The effect of hydrofluoric acid (HF) catalyst concentration in coating solution on chemical,
physical and structural properties of silica aerogel thin films was investigated. The aerogel …
physical and structural properties of silica aerogel thin films was investigated. The aerogel …
Amorphization of SiO2 Thin Films by Using 200 MeV Ag15+ Ions
Abstract Effect of swift heavy ions (SHI) on low-k SiO 2 thin films has been investigated. SiO
2 thin films were deposited on pre-cleaned p-Si substrate by using sol-gel spin coating …
2 thin films were deposited on pre-cleaned p-Si substrate by using sol-gel spin coating …
Tween-80 based ultra low-k (ULK) mesoporous films
The non-ionic surfactant polysorbate 80 (Tween-80) based single step HF assisted
mesoporous low-k films were synthesized by using sol–gel spin coating technique. The …
mesoporous low-k films were synthesized by using sol–gel spin coating technique. The …
[PDF][PDF] Molecular Layer Deposition of Organic-Inorganic Hybrid Dielectric Thin Films
X Li - 2024 - helda.helsinki.fi
With the development of modern technology, sizes of electronic devices have become
smaller and smaller, and the interconnect resistance capacitance (RC) delays greatly affect …
smaller and smaller, and the interconnect resistance capacitance (RC) delays greatly affect …
Synthesis and Characterization of Porogen Based Porous Low-k Thin Films
The present work is focused towards the lowering of the k value of deposited SiO 2 thin films
by varying solvent concentration ie ethanol in the range 4-10 ml. Porous low-k thin films …
by varying solvent concentration ie ethanol in the range 4-10 ml. Porous low-k thin films …
Preparation and Characterization of Low Dielectric Constant Films Using Silicon Sources
ZW He, HX Lin, CY Li, AM Mahajan… - Materials Science …, 2020 - Trans Tech Publ
Effect of various silicon sources, such as TEOS, MTES mixed with TEOS and 1, 3, 5-tris
(triethoxymethyl) on SiO 2 films was investigated. The synthesized solutions were used as …
(triethoxymethyl) on SiO 2 films was investigated. The synthesized solutions were used as …