Roadmap of terahertz imaging 2021
In this roadmap article, we have focused on the most recent advances in terahertz (THz)
imaging with particular attention paid to the optimization and miniaturization of the THz …
imaging with particular attention paid to the optimization and miniaturization of the THz …
Theory of antiferromagnet-based detector of terahertz frequency signals
We present a theory of a detector of terahertz-frequency signals based on an
antiferromagnetic (AFM) crystal. The conversion of a THz-frequency electromagnetic signal …
antiferromagnetic (AFM) crystal. The conversion of a THz-frequency electromagnetic signal …
Trap-assisted enhancement of the responsivity in asymmetric planar GaN-based nanodiodes at low temperature
The microwave detection capability of GaN-based asymmetric planar nanodiodes (so-called
Self-Switching Diode, SSD, due to its non-linearity) has been characterized in a wide …
Self-Switching Diode, SSD, due to its non-linearity) has been characterized in a wide …
Integration of antenna array and self-switching graphene diode for detection at 28 GHz
In this letter, a rectenna based on a graphene self-switching diode is presented. The
nonlinear behavior of the diode is beneficial to efficiently detect the RF power in the Ka …
nonlinear behavior of the diode is beneficial to efficiently detect the RF power in the Ka …
Current and voltage responsivity up to 110 GHz in GaN asymmetric nano-diodes
The detection capability of GaN-based nano-diodes is measured up to 110 GHz in two
configuration schemes: voltage and current responsivity. The ratio between both figures of …
configuration schemes: voltage and current responsivity. The ratio between both figures of …
Monte Carlo analysis of the influence of surface charges on GaN asymmetric nanochannels: Bias and temperature dependence
E Pérez-Martín, I Íñiguez-De-La-Torre… - Journal of Applied …, 2021 - pubs.aip.org
In this paper, the occupancy of sidewall surface states having a clear signature in the
performance of AlGaN/GaN-based self-switching diodes (SSDs) is analyzed using a semi …
performance of AlGaN/GaN-based self-switching diodes (SSDs) is analyzed using a semi …
Voltage controlled sub-THz detection with gated planar asymmetric nanochannels
This letter reports on room temperature sub-THz detection using self-switching diodes based
on an AlGaN/GaN heterostructure on a Si substrate. By means of free-space measurements …
on an AlGaN/GaN heterostructure on a Si substrate. By means of free-space measurements …
Trap-related frequency dispersion of zero-bias microwave responsivity at low temperature in GaN-based self-switching diodes
The zero-bias microwave detection capability of self-switching diodes (SSDs) based on
AlGaN/GaN is analyzed in a wide temperature range, from 10 K to 300 K. The measured …
AlGaN/GaN is analyzed in a wide temperature range, from 10 K to 300 K. The measured …
Microwave detection using two-atom-thick self-switching diodes based on quantum simulations and advanced circuit models
M Aldrigo, M Dragoman, N Pelagalli… - IEEE Transactions …, 2021 - ieeexplore.ieee.org
In this article, a two-atom-thick diode based on 2-D materials is presented for microwave
detection. The diode consists of a molybdenum disulfide monolayer/graphene monolayer …
detection. The diode consists of a molybdenum disulfide monolayer/graphene monolayer …
Influence of Surface States in AlGaN/GaN Nanodiodes Analyzed by Preconditioned Transient Current Measurements
H Sánchez-Martín, LC Nunes… - IEEE Transactions …, 2024 - ieeexplore.ieee.org
AlGaN/GaN nanodiodes consisting of an array of several nanochannels in parallel are
potential candidates for detection in the terahertz (THz) range. The nanochannels are …
potential candidates for detection in the terahertz (THz) range. The nanochannels are …