After a predetermined period of time in a life cycle of a flash memory device, a plurality of
reliability values corresponding to a plurality of reads of one or more of the plurality of …

A table of error counts is generated based on reading wordlines of a flash memory device,
the table storing an error count for each combination of wordline and respective read level …

A non-volatile memory device according to example embodiments includes at least one
NAND flash memory and a memory controller configured to control the NAND flash memory …

A plurality of flash memory wordlines of a flash storage device are divided into a plurality of
wordline groups based on read error counts associated with the wordlines and a plurality of …

An operation method of a nonvolatile memory system in accordance with example
embodiments of inventive con cepts includes detecting an on-cell count of the memory cells …

In a method of operating a nonvolatile memory device including a memory cell array, where
the memory cell array includes a plurality of pages, and each of the plurality of pages …

A memory system includes multiple storage devices that each include a nonvolatile memory
device. A client device is configured to collect deterioration information of the nonvolatile …

After a predetermined period of time in a life cycle of a flash memory device, a plurality of
reliability values corresponding to a plurality of reads of one or more of the plurality of …

(57) ABSTRACT A characteristic data pre-processing system includes a data acquisition
device that collects characteristic data including first cell distribution data defined according …

A non-volatile memory device includes a page buffer and a control logic. The page buffer
includes a plurality of latch sets that latches first results of a plurality of first read operations …