Since 2010, vacuum‐processed oxide semiconductors have greatly improved with the
publication of more than 1,300 related papers. Although the number of researches on oxide …

In this study, high-performance indium–gallium–zinc oxide thin-film transistors (IGZO TFTs)
with a dual-gate (DG) structure were manufactured using plasma treatment and rapid …

In this study, we examined the effects of aluminum oxide (Al 2 O 3) surface passivation on
the radiation damage of indium-gallium-tin oxide (IGTO) thin films and radiation hardness of …

Field‐effect transistors (FETs) with nanoscale channels have emerged as excellent
platforms for constructing high‐sensitivity biosensors. However, in typical FET‐based …

In this study, hetero-structured and self-passivated oxide thin film transistors (TFTs) were
fabricated, wherein the channel comprised a N 2 O plasma (a-IGZO: N 2 O) treated a-IGZO …

Under varying growth and device processing conditions, ultrabroadband photoconduction
(UBPC) reveals strongly evolving trends in the defect density of states (DoS) for amorphous …

The development of p-channel devices with comparable electrical performances to their n-
channel counterparts has been delayed due to the lack of p-type semiconductor materials …

Abstract Zinc-Tin-Oxide (ZTO) thin films were fabricated using a simple and eco-friendly sol-
gel method and their application in thin film transistors (TFTs) was investigated. Annealing …

This review aims to provide a technical roadmap and an overview of recent progress in the
development of backplane thin film transistors (TFTs) for organic light-emitting diodes flat …

This paper investigates the effects of different passivation layers (PVLs) on the electrical
performance and reliability of amorphous indium gallium zinc oxide (a-In-Ga-ZnO) thin film …