High-speed III-V nanowire photodetector monolithically integrated on Si
Direct epitaxial growth of III-Vs on silicon for optical emitters and detectors is an elusive goal.
Nanowires enable the local integration of high-quality III-V material, but advanced devices …
Nanowires enable the local integration of high-quality III-V material, but advanced devices …
[PDF][PDF] An advanced III-V-on-silicon photonic integration platform
In many application scenarios, silicon (Si) photonics favors the integration of III-V gain
material onto Si substrate to realize the on-chip light source. In addition to the current …
material onto Si substrate to realize the on-chip light source. In addition to the current …
Waveguide coupled III-V photodiodes monolithically integrated on Si
The seamless integration of III-V nanostructures on silicon is a long-standing goal and an
important step towards integrated optical links. In the present work, we demonstrate scaled …
important step towards integrated optical links. In the present work, we demonstrate scaled …
In-plane monolithic integration of scaled iii-v photonic devices
It is a long-standing goal to leverage silicon photonics through the combination of a low-cost
advanced silicon platform with III-V-based active gain material. The monolithic integration of …
advanced silicon platform with III-V-based active gain material. The monolithic integration of …
Heterogeneous integration of III–V materials by direct wafer bonding for high-performance electronics and optoelectronics
III-V materials, such as InGaAs and InP, are highly attractive for high-performance
electronics and optoelectronics owning to their high carrier mobilities and potential for …
electronics and optoelectronics owning to their high carrier mobilities and potential for …
Designed semiconductor network random lasers
Conventional lasers typically support a well‐defined comb of modes. Coupling many
resonators together to form larger complex cavities enables the design of the spatial and …
resonators together to form larger complex cavities enables the design of the spatial and …
III–V infrared emitters on Si: fabrication concepts, device architectures and down-scaling with a focus on template-assisted selective epitaxy
The local integration of III–Vs on Si is relevant for a wide range of applications in electronics
and photonics, since it combines a mature and established materials platform with desired …
and photonics, since it combines a mature and established materials platform with desired …
Wurtzite InP microdisks: from epitaxy to room-temperature lasing
Metastable wurtzite crystal phases of conventional semiconductors comprise enormous
potential for high-performance electro-optical devices, owed to their extended tunable direct …
potential for high-performance electro-optical devices, owed to their extended tunable direct …
Nanolaser potential in communications and data handling
GP Puccioni, T Wang, GL Lippi - Semiconductor Lasers and …, 2024 - spiedigitallibrary.org
The pivotal role played by semiconductor lasers in telecommunications and data storage
applications requires dealing with time lag and relaxation oscillations, which limit bandwidth …
applications requires dealing with time lag and relaxation oscillations, which limit bandwidth …
Controlling lasing around exceptional points in coupled nanolasers
Coupled nanolasers are of growing interest for on-chip optical computation and data
transmission, which requires an understanding of how lasers interact to form complex …
transmission, which requires an understanding of how lasers interact to form complex …