Anti‐Ambipolar Heterojunctions: Materials, Devices, and Circuits

Y Meng, W Wang, W Wang, B Li, Y Zhang… - Advanced …, 2024 - Wiley Online Library
Anti‐ambipolar heterojunctions are vital in constructing high‐frequency oscillators, fast
switches, and multivalued logic (MVL) devices, which hold promising potential for next …

[HTML][HTML] Wide bandgap semiconductor-based integrated circuits

S Yuvaraja, V Khandelwal, X Tang, X Li - Chip, 2023 - Elsevier
Wide-bandgap semiconductors possess much larger energy bandgaps in comparison to
traditional semiconductors such as silicon, rendering them very promising for applications in …

Ternary logic circuit and neural network integration via small molecule‐based antiambipolar vertical electrochemical transistor

Z Deng, Y Yu, Y Zhou, J Zhou, M Xie, B Tao… - Advanced …, 2024 - Wiley Online Library
Circuits based on organic electrochemical transistors (OECTs) have great potential in the
fields of biosensors and artificial neural computation due to their biocompatibility and neural …

Reconfigurable Vertical Phototransistor with MoTe2 Homojunction for High-Speed Rectifier and Multivalued Logical Circuits

Q Deng, T Zhao, J Zhang, W Yue, L Li, S Li, L Zhu… - ACS …, 2024 - ACS Publications
The most reported two-dimensional (2D) reconfigurable multivalued logic (RMVL) devices
primarily involve a planar configuration and carrier transport, which limits the high-density …

Plasma Treatment Induced Charge Transfer for Realization of Negative Differential Transconductance in Van Der Waals Single‐Channel

KH Han, SH Kim, JH Kim, HY Yu - Advanced Functional …, 2024 - Wiley Online Library
For upcoming AI computing era, the multi‐valued logic (MVL) is promising for processing
multiple information with high‐density device. Particularly, the negative differential …

Anti-ambipolar transport and logic operation in two-dimensional field-effect transistors using in-series integration of GeAs and SnS2

JH Kim, BH Moon, GH Han - Applied Physics Letters, 2024 - pubs.aip.org
Germanium arsenide (GeAs) from the IV–V semiconductor family has drawn attention for its
anisotropic optical and electrical characteristics as a robust p-type semiconductor with high …

Charge Transport Advancement in Anti‐Ambipolar Transistors: Spatially Separating Layer Sandwiched between N‐Type Metal Oxides and P‐Type Small Molecules

Y Han, S Lee, M Kim, W Shin, H Lee… - Advanced Functional …, 2024 - Wiley Online Library
Interface issues with organic semiconductors on metal oxide challenge realizing a high‐
performance anti‐ambipolar transistor (AAT) with stable operation. The motivation behind …

Charge transfer mechanism for realization of double negative differential transconductance

KH Han, SH Kim, SG Kim, JH Kim, S Song… - npj 2D Materials and …, 2024 - nature.com
With development of information age, multi-valued logic (MVL) technology utilizing negative
differential transconductance (NDT) phenomenon has drawn attention as next-generation …

Exploring new logic devices: Unlocking potential with floating-gate transistor

C Lee, J Choi, C Lee, H Yoo, SG Im - Applied Physics Reviews, 2024 - pubs.aip.org
Floating-gate devices occupy a pivotal position in contemporary electronic systems, owing to
their versatile capabilities in nonvolatile memory storage, analog circuit design, and …

Area and Device Count Efficient Binary Logic Circuits using Anti‐Ambipolar Switch Devices

JH Jun, Y Lee, HW Lee, M Kim… - Advanced Electronic …, 2024 - Wiley Online Library
The unique characteristics of an anti‐ambipolar switch (AAS) device exhibit Λ‐shaped
transfer responses (namely delta conductance) and present unique opportunities to …