Growth behavior and mechanism of atomic layer deposition of Ru for replacing Cu-interconnects

M Wang, J Wang, L Jin, T Yu, D Yu - Vacuum, 2024 - Elsevier
The growth behavior and nucleation mechanism of Ru films on various substrates using Ru
(EtCp) 2 as the precursor and O 2 as the reactant were studied systematically. The results …

[HTML][HTML] Ultrasmooth cobalt films on SiO2 by chemical vapor deposition using a nucleation promoter and a growth inhibitor

ZV Zhang, S Liu, GS Girolami… - Journal of Vacuum Science …, 2021 - pubs.aip.org
Very smooth thin films of Co are deposited on SiO 2 by chemical vapor deposition from the
precursor dicobalt octacarbonyl Co 2 (CO) 8 by augmenting the process conditions in two …

The effect of an iodine source on nucleation and film properties of Ru films deposited by chemical vapor deposition

KM Thom, JG Ekerdt - Thin Solid Films, 2009 - Elsevier
The chemical vapor deposition of Ru films from (2, 4-dimethylpentadienyl)(
ethylcyclopentadienyl) Ru and O2 was carried out both with and without CH3I addition. X …

[图书][B] Growth and characterization of ruthenium films deposited by chemical vapor deposition: Towards enhanced nucleation and film properties

KM Thom - 2009 - search.proquest.com
As device dimensions in integrated circuits scale down, there is an increasing need to
deposit ultra-thin, smooth, continuous films for use in applications such as the liner in back …

Thermal Stability Enhancement of SLFEPD-Ag on ALD-TiN Film

J Chao-An, H Chia-Wei, C Ren-Jei, S Ying-Hao… - Physics Procedia, 2012 - Elsevier
In this study, seed layer free electrochemical plating deposition (SLF-EPD) for Ag on ALD-
TiN film was demonstrated. By way of the surface condition modification, EPD-Ag film has …