Lattice‐Mismatched Epitaxy of InAs on (111) A‐Oriented Substrate: Metamorphic Layer Growth and Self‐Assembly of Quantum Dots
In this article, recent developments in the lattice‐mismatched epitaxy of InAs on (111) A‐
oriented substrates and related research topics, in which the presence or absence of the …
oriented substrates and related research topics, in which the presence or absence of the …
Properties of AlxGa1−xAs grown from a mixed Ga–Bi melt
O Khvostikova, A Vlasov, B Ber, R Salii… - Scientific Reports, 2024 - nature.com
Thick smoothly graded AlxGa1− xAs layers (50–100 µm) are used in light-emitting diode
structures and also for creation of high-power photovoltaic converters with side-input of laser …
structures and also for creation of high-power photovoltaic converters with side-input of laser …
Molecular Beam Epitaxy Growth of Atomically Flat GaAs(111)A by As2
We analyzed the growth dynamics during the heteroepitaxy on a GaAs (111) A surface
under an As2 flux. The growth is significantly influenced by the Ehrlich–Schwöbel effect …
under an As2 flux. The growth is significantly influenced by the Ehrlich–Schwöbel effect …
[HTML][HTML] Electronic properties of metamorphic GaSbBi films on GaAs
J Hilska, J Puustinen, E Koivusalo, M Guina - APL Materials, 2025 - pubs.aip.org
We report on the electronic, structural, and optical properties of epitaxial GaSbBi films with
varying Bi-concentration (up to 7% Bi) grown on semi-insulating GaAs (100) substrates. The …
varying Bi-concentration (up to 7% Bi) grown on semi-insulating GaAs (100) substrates. The …
[HTML][HTML] Bismuth surfactant enhancement of surface morphology and film quality of MBE-grown GaSb (100) thin films over a wide range of growth temperatures
We investigate the surface morphologies of two series of homoepitaxial GaSb (100) thin
films grown on GaSb (100) substrates by molecular beam epitaxy in a Veeco GENxplor …
films grown on GaSb (100) substrates by molecular beam epitaxy in a Veeco GENxplor …