Monolithic three-dimensional integration with 2D material-based p-type transistors

T Zou, Y Reo, S Heo, H Jung, S Kim, A Liu… - Materials Science and …, 2025 - Elsevier
Monolithic three-dimensional (M3D) integration offers a promising solution to the limitations
of silicon (Si) integrated circuits as they reach their physical limits, including problems with …

High-throughput design of functional-engineered MXene transistors with low-resistive contacts

S Guha, A Kabiraj, S Mahapatra - npj Computational Materials, 2022 - nature.com
Two-dimensional material-based transistors are being extensively investigated for CMOS
(complementary metal oxide semiconductor) technology extension; nevertheless …

Fermi level pinning in metal oxides: influence on photocatalysis and photoelectrochemistry

D Mamedov, SZ Karazhanov… - Journal of Physics …, 2024 - iopscience.iop.org
Photocatalysis and photoelectrochemical (PEC) reactions are complex processes involving
both the physical properties and surface chemistry of the semiconductor photocatalyst. Their …

Direct observation of highly anisotropic electronic and optical nature in indium telluride

G Kremer, A Mahmoudi, M Bouaziz… - Physical Review …, 2023 - APS
Metal monochalcogenides (MX, M= Ga, In; X= S, Se, Te) offer a large variety of electronic
properties depending on chemical composition, number of layers, and stacking order. InTe …

Laser Irradiation Effect on the p-GaSe/n-HfS2 PN-Heterojunction for High-Performance Phototransistors

Z Muhammad, R Islam, Y Wang, C Autieri… - … Applied Materials & …, 2022 - ACS Publications
Two-dimensional (2D)-based PN-heterojunction revealed a promising future of atomically
thin optoelectronics with diverse functionalities in different environments. Herein, we …

Self-limiting stoichiometry in SnSe thin films

JR Chin, MB Frye, DSH Liu, M Hilse, IC Graham… - Nanoscale, 2023 - pubs.rsc.org
Unique functionalities can arise when 2D materials are scaled down near the monolayer
limit. However, in 2D materials with strong van der Waals bonds between layers, such as …

Anisotropic phonon and magnon vibration and gate-tunable optoelectronic properties of nickel thiophosphite

Z Muhammad, J Szpakowski, G Abbas, L Zu… - 2D …, 2023 - iopscience.iop.org
Transition metal phosphorus trichalcogenides retain spin-charge coupling and lattice
vibrations in different layers, which are useful for spintronic and optoelectronic devices. The …

Nonlinear self-calibrated spectrometer with single GeSe-InSe heterojunction device

R Darweesh, RK Yadav, E Adler, M Poplinger… - Science …, 2024 - science.org
Computational spectrometry is an emerging field that uses photodetection in conjunction
with numerical algorithms for spectroscopic measurements. Compact single photodetectors …

Controllable preparation of ultrathin GeSe nanosheets for infrared photodetection

Y Mao, X Wu, H Chen, J Deng - Infrared Physics & Technology, 2023 - Elsevier
In this paper, high quality 2D GeSe nanosheets are successfully synthesized using Se
powder and Ge powder as raw materials by chemical vapor deposition method. The area of …

Large-area GeSe realized using pulsed laser deposition for ultralow-noise and ultrafast broadband phototransistors

S Dewan, PD Khanikar, R Mudgal… - … Applied Materials & …, 2023 - ACS Publications
Here, we report on the comprehensive growth, characterization, and optoelectronic
application of large-area, two-dimensional germanium selenide (GeSe) layers prepared …