[HTML][HTML] III-nitride nanowires on unconventional substrates: From materials to optoelectronic device applications
Group-III nitrides and their alloys feature direct bandgaps covering a broad range of the
electromagnetic spectrum, making them a promising material system for various …
electromagnetic spectrum, making them a promising material system for various …
Review of nanophotonics approaches using nanostructures and nanofabrication for III-nitrides ultraviolet-photonic devices
Group III-nitride semiconductor materials especially AlGaN are key-emerging candidates for
the advancement of ultraviolet (UV) photonic devices. Numerous nanophotonics …
the advancement of ultraviolet (UV) photonic devices. Numerous nanophotonics …
Catalyst-free InGaN/GaN nanowire light emitting diodes grown on (001) silicon by molecular beam epitaxy
Catalyst-free growth of (In) GaN nanowires on (001) silicon substrate by plasma-assisted
molecular beam epitaxy is demonstrated. The nanowires with diameter ranging from 10 to …
molecular beam epitaxy is demonstrated. The nanowires with diameter ranging from 10 to …
Aluminum nitride nanowire light emitting diodes: Breaking the fundamental bottleneck of deep ultraviolet light sources
Despite broad interest in aluminum gallium nitride (AlGaN) optoelectronic devices for deep
ultraviolet (DUV) applications, the performance of conventional Al (Ga) N planar devices …
ultraviolet (DUV) applications, the performance of conventional Al (Ga) N planar devices …
GaAs/AlGaAs core multishell nanowire-based light-emitting diodes on Si
We report on integration of GaAs nanowire-based light-emitting-diodes (NW-LEDs) on Si
substrate by selective-area metalorganic vapor phase epitaxy. The vertically aligned …
substrate by selective-area metalorganic vapor phase epitaxy. The vertically aligned …
Ti-mask selective-area growth of GaN by RF-plasma-assisted molecular-beam epitaxy for fabricating regularly arranged InGaN/GaN nanocolumns
H Sekiguchi, K Kishino, A Kikuchi - Applied physics express, 2008 - iopscience.iop.org
The Ti-mask selective-area growth (SAG) of GaN on Ti-nanohole-patterned GaN templates
by rf-plasma-assisted molecular-beam epitaxy was employed to demonstrate the fabrication …
by rf-plasma-assisted molecular-beam epitaxy was employed to demonstrate the fabrication …
InGaN/GaN disk-in-nanowire white light emitting diodes on (001) silicon
High density (∼ 10 11 cm− 2) GaN nanowires and InGaN/GaN disk-in-nanowire
heterostructures have been grown on (001) silicon substrates by plasma-assisted molecular …
heterostructures have been grown on (001) silicon substrates by plasma-assisted molecular …
Coaxial multishell (In, Ga) As/GaAs nanowires for near-infrared emission on Si substrates
E Dimakis, U Jahn, M Ramsteiner, A Tahraoui… - Nano …, 2014 - ACS Publications
Efficient infrared light emitters integrated on the mature Si technology platform could lead to
on-chip optical interconnects as deemed necessary for future generations of ultrafast …
on-chip optical interconnects as deemed necessary for future generations of ultrafast …
Monolithic integration of InGaN-based nanocolumn light-emitting diodes with different emission colors
K Kishino, K Nagashima, K Yamano - Applied Physics Express, 2012 - iopscience.iop.org
We demonstrate the monolithic integration of green and orange InGaN-based nanocolumn
light-emitting diodes (LEDs). Four nanocolumn LED crystals (LEDs 1 to 4), which consisted …
light-emitting diodes (LEDs). Four nanocolumn LED crystals (LEDs 1 to 4), which consisted …
On the mechanism of highly efficient p-type conduction of Mg-doped ultra-wide-bandgap AlN nanostructures
Free hole concentrations up to∼ 6× 10 17 cm− 3 were measured in Mg-doped AlN
nanowires at room-temperature, which is several orders of magnitude larger than that of …
nanowires at room-temperature, which is several orders of magnitude larger than that of …