This paper aims at reviewing the state-of-the art of Ge pMOSFETs for future high-
performance CMOS devices. Key in the development is the integration of a Ge channel on a …

Berberine (BBR) is a renowned natural compound that exhibits potent neuroprotective
activities. However, the cellular and molecular mechanisms are still unclear. Hormesis is an …

This study presents a laser activation process (LAP) for germanium (Ge) to improve the
electrical performance of n-type Ge devices. The LAP highly activated the dopant and …

We present (i) a novel, thermally stable Atomic Layer Deposition (ALD) high-k dielectric
stack that, for the first time, has the potential to meet all gate stack requirements for both n …

The metal resistance in the transmission line model (TLM) structures creates a serious
obstacle to determine precisely the intrinsic contact resistivity. To tackle this problem, we …

The prospect of GeSn semiconductors for silicon-integrated infrared optoelectronics brings
new challenges related to the metastability of this class of materials. As a matter of fact …

Whilst high performance p-channel Ge MOSFETs have been demonstrated [1–4], Ge n-
channel MOSFET drive current has been lagging behind mainly hampered by high access …

The physics of ohmic contact formation for nickel stanogermanide [Ni (Ge 1-x Sn x)] on n-
type germanium-tin (n-Ge 1-x Sn x) was investigated. Low-resistivity Ni (Ge 1-x Sn x) was …

We demonstrate Ge enhancement-mode nMOS FinFETs fabricated on 300-mm Si wafers,
incorporating an optimized gate-stack (interface trap density D it below 2× 10 11 eV-1· cm …

In this paper, state-of-the-art laser thermal annealing is used to form germanide contacts on
n-doped Ge and is systematically compared with results generated by conventional rapid …