Prospects and applications of on-chip lasers
Integrated silicon photonics has sparked a significant ramp-up of investment in both
academia and industry as a scalable, power-efficient, and eco-friendly solution. At the heart …
academia and industry as a scalable, power-efficient, and eco-friendly solution. At the heart …
Contact engineering for 2D materials and devices
Over the past decade, the field of two-dimensional (2D) layered materials has surged,
promising a new platform for studying diverse physical phenomena that are scientifically …
promising a new platform for studying diverse physical phenomena that are scientifically …
Lasing in direct-bandgap GeSn alloy grown on Si
Large-scale optoelectronics integration is limited by the inability of Si to emit light efficiently,
because Si and the chemically well-matched Ge are indirect-bandgap semiconductors. To …
because Si and the chemically well-matched Ge are indirect-bandgap semiconductors. To …
Si–Ge–Sn alloys: From growth to applications
In this review article, we address key material parameters as well as the fabrication and
application of crystalline GeSn binary and SiGeSn ternary alloys. Here, the transition from an …
application of crystalline GeSn binary and SiGeSn ternary alloys. Here, the transition from an …
Low-threshold optically pumped lasing in highly strained germanium nanowires
The integration of efficient, miniaturized group IV lasers into CMOS architecture holds the
key to the realization of fully functional photonic-integrated circuits. Despite several years of …
key to the realization of fully functional photonic-integrated circuits. Despite several years of …
Growth and applications of GeSn-related group-IV semiconductor materials
S Zaima, O Nakatsuka, N Taoka… - … and technology of …, 2015 - iopscience.iop.org
We review the technology of Ge 1− x Sn x-related group-IV semiconductor materials for
developing Si-based nanoelectronics. Ge 1− x Sn x-related materials provide novel …
developing Si-based nanoelectronics. Ge 1− x Sn x-related materials provide novel …
Direct-bandgap GeSn grown on silicon with 2230 nm photoluminescence
Material and optical characterizations have been conducted for epitaxially grown Ge 1− x Sn
x thin films on Si with Sn composition up to 10%. A direct bandgap Ge 0.9 Sn 0.1 alloy has …
x thin films on Si with Sn composition up to 10%. A direct bandgap Ge 0.9 Sn 0.1 alloy has …
Tunable Indirect to Direct Band Gap Transition of Monolayer Sc2CO2 by the Strain Effect
MXene has not yet been investigated in optical applications because it is a newly suggested
two-dimensional material. In the present work, the first investigation of the prospects of …
two-dimensional material. In the present work, the first investigation of the prospects of …
Investigation of GeSn strain relaxation and spontaneous composition gradient for low-defect and high-Sn alloy growth
Recent development of group-IV alloy GeSn indicates its bright future for the application of
mid-infrared Si photonics. Relaxed GeSn with high material quality and high Sn composition …
mid-infrared Si photonics. Relaxed GeSn with high material quality and high Sn composition …
All‐Group IV Transferable Membrane Mid‐Infrared Photodetectors
Semiconductor membranes emerged as a versatile class of nanomaterials to control lattice
strain and engineer complex heterostructures enabling a variety of innovative applications …
strain and engineer complex heterostructures enabling a variety of innovative applications …