7,505.322 B2 3/2009 Lee 7,515,463 B2 4/2009 Hemink 7,623.385 B2 11/2009 Kim et al.
2009/0268524 A1 10/2009 Maejima and/or Vsgs unsel, interrupting the boosting …

Disclosed is a three-dimensional semiconductor memory device, comprising a cell array
formed on a first substrate and a peripheral circuit formed on a second substrate that is at …

The embodiments described herein include systems, meth ods and/or devices that may
enhance the endurance of a storage system including a storage medium. The method …

Abstract Systems, methods, and/or devices are used to implement variable bit encoding per
NAND flash cell to extend life of flash-based storage devices and preserve over …

A memory controller configures a plurality of word lines associated with a respective block of
a 3D memory device in a first configuration, where the first configuration includes a set of …

The embodiments described herein include systems, meth ods and/or devices that may
enhance the endurance of a storage system including a storage medium. The method …

Systems, methods and/or devices are used to enable notifi cation of a trigger condition to
reduce declared capacity of a storage device in a multi-storage-device storage system. In …

7.433, 233 B2 10/2008 Chen et al. 7.495, 956 B2 2/2009 Fong et al. 7,719,902 B2 5/2010
Dong et al. 7,760,550 B2 7/2010 Fayrushin et al. 7,852,676 B2* 12/2010 Maejima …

A memory controller configures a plurality of word lines associated with a respective block of
a 3D memory device in a first configuration, where the first configuration includes a set of …

Abstract Systems and methods disclosed herein allow for efficiently managing unmapped
blocks to extend life of solid-state drives. In one aspect, a method includes: measuring a …