This paper describes device simulation studies of surface and buffer trapping effects on
static IV, output-admittance (Y 22), and transient characteristics of AlGaN/GaN HEMTs. The …

The paper deals with trap effects in InAlN/AlN/GaN and AlGaN/AlN/GaN high electron
mobility transistor structures using frequency dependent conductance and High-Low …

For the commercial implementation of GaN-based high electron mobility transistor (HEMT)
and GaN-based pseudomorphic HEMT (pHEMT), the temperature dependency of the two …

Background: The upsurge in the field of radio frequency power electronics has led to the
involvement of wide bandgap semiconductor materials because of their potential …

Shifts in the threshold voltage VT subject to temperature in AlGaN/GaN-based high-electron-
mobility transistors (HEMTs) grown on silicon carbide substrate are reported. Variation of VT …

This paper investigated the temperature effects on the performance of the AlGaN/GaN high
electron mobility transistor (HEMT) with a 150 nm and 250 nm gate length on a SiC …

Electron trapping-detrapping phenomena were studied for InAlN/GaN high electron mobility
transistors (HEMTs) by drain current-drain voltage static and pulsed current voltage (IV) …

In this paper, InP-based high electron mobility transistors were investigated for an electron
fluence of 5× 10 15 cm− 2 at 1 MeV. The channel current and transconductance were …

Reliability studies are fundamental to optimize the use of new emerging technologies such
as AlGaN/GaN HEMTs. This paper reports a reliability study on two power amplifiers using …

This article investigates the trapping mechanism in AlGaN/GaN heterostructure. For our
study, the traps within the AlGaN layer are introduced at the interface and near the interface …