In this review article, we discuss the molecular beam epitaxy and basic structural, electronic,
optical, excitonic, chemical and catalytic properties of III-nitride nanostructures, including …

p-Type doping represents a key step towards III-nitride (InN, GaN, AlN) optoelectronic
devices. In the past, tremendous efforts have been devoted to obtaining high quality p-type …

In this Letter, we demonstrate that with the merit of nanowire structure and a self-catalytic
growth process p-type InN can be realized for the first time by “direct” magnesium (Mg) …

The effect of treatment temperature on structural, morphological, and electrical properties of
Nb 2 O 5 thin films using the precipitation method is presented in this work. Clear …

In this article, we provide an overview on the recent advances made in InN, including both
planar and nanowire structures. With the improved epitaxial growth process, the background …

Hole mobility in wurtzite InN at low electric fields is studied by an ensemble Monte Carlo
calculation. Scatterings of holes by polar optical phonons, nonpolar optical phonons …

We report evidence of the transition from n-to p-type conduction of InN with increasing Mg
dopant concentration by using photoconductivity (PC) measurement at room temperature …

Measuring p-type transport properties by the Hall method in the presence of a parallel n-type
carrier system with higher mobility is challenging as the measurement often indicates an …

Infrared to vacuum-ultraviolet spectroscopic ellipsometry and far-infrared optical Hall-effect
measurements are applied to conclude on successful p-type doping of InN films. A …

Colloidal semiconductor nanostructures are fascinating free-standing chemical objects that
combine the general characteristics and stability of inorganic semiconducting materials with …