Present status and future prospect of widegap semiconductor high-power devices
H Okumura - Japanese journal of applied physics, 2006 - iopscience.iop.org
High-power device technology is a key technological factor for wireless communication,
which is one of the information network infrastructures in the 21st century, as well as power …
which is one of the information network infrastructures in the 21st century, as well as power …
SiC materials-progress, status, and potential roadblocks
AR Powell, LB Rowland - Proceedings of the IEEE, 2002 - ieeexplore.ieee.org
SiC materials are currently metamorphosing from research and development into a market
driven manufacturing product. SiC substrates are currently used as the base for a large …
driven manufacturing product. SiC substrates are currently used as the base for a large …
Silicon carbide
D Chaussende, N Ohtani - Single crystals of electronic materials, 2019 - Elsevier
Silicon carbide (SiC) is a wide bandgap semiconductor that is currently contributing to a
deep transformation of power electronics, because of its outstanding combination of physical …
deep transformation of power electronics, because of its outstanding combination of physical …
Molecular dynamics simulation of ion-implanted single-crystal 3C-SiC nano-indentation
W Wu, Y Hu, X Meng, J Dai, H Dai - Journal of Manufacturing Processes, 2022 - Elsevier
To improve the machinability of the brittle material 3C-SiC, a new method of ion implantation
surface modification is proposed. Molecular dynamics simulations were employed to …
surface modification is proposed. Molecular dynamics simulations were employed to …
Advances in fast 4H–SiC crystal growth and defect reduction by high-temperature gas-source method
H Tsuchida, T Kanda - Materials Science in Semiconductor Processing, 2024 - Elsevier
This paper reviews recent progress in the development of high-speed 4H–SiC bulk crystal
growth technology using the high-temperature gas-source method (high-temperature …
growth technology using the high-temperature gas-source method (high-temperature …
Atomic-scale study of vacancy defects in SiC affecting on removal mechanisms during nano-abrasion process
P Zhou, T Sun, X Shi, J Li, Y Zhu, Z Wang - Tribology International, 2020 - Elsevier
The mechanical properties of mono-crystalline SiC with vacancy defects in fixed abrasive
polishing processes are not well known at the nanometric scale. In the molecular dynamic …
polishing processes are not well known at the nanometric scale. In the molecular dynamic …
Defects and carrier compensation in semi-insulating substrates
Electron paramagnetic resonance (EPR) studies revealed that vacancies (VC and V Si),
carbon vacancy-antisite pairs (VCC Si) and the divacancy (VCV Si) are common defects in …
carbon vacancy-antisite pairs (VCC Si) and the divacancy (VCV Si) are common defects in …
SiC crystal growth by HTCVD
A Ellison, B Magnusson, B Sundqvist… - Materials Science …, 2004 - Trans Tech Publ
Advances in the development of the HTCVD technique for growth of bulk 2-inch diameter 4H
SiC crystals are reviewed with demonstration of micropipe density down to 0.3 cm-2, low …
SiC crystals are reviewed with demonstration of micropipe density down to 0.3 cm-2, low …
HTCVD grown semi-insulating SiC substrates
The low residual doping of HTCVD grown semi-insulating SiC crystals enables the use of
decreased concentrations of compensating deep levels, thereby providing new material …
decreased concentrations of compensating deep levels, thereby providing new material …
Optical and magnetic resonance signatures of deep levels in semi-insulating 4H SiC
WE Carlos, ER Glaser, BV Shanabrook - Physica B: Condensed Matter, 2003 - Elsevier
We have studied semi-insulating (SI) 4H SiC grown by physical vapor transport (PVT) and
by high-temperature chemical vapor deposition (HTCVD) using electron paramagnetic …
by high-temperature chemical vapor deposition (HTCVD) using electron paramagnetic …