Spectroscopic ellipsometry and polarimetry for materials and systems analysis at the nanometer scale: state-of-the-art, potential, and perspectives
This paper discusses the fundamentals, applications, potential, limitations, and future
perspectives of polarized light reflection techniques for the characterization of materials and …
perspectives of polarized light reflection techniques for the characterization of materials and …
Structure-dependent electronic properties of nanocrystalline cerium oxide films
We investigate the electronic properties of nanocrystalline cerium oxide (CeO x) films, grown
by various techniques, and we establish universal relations between them and the film …
by various techniques, and we establish universal relations between them and the film …
Device structure-dependent field-effect and photoresponse performances of p-type ZnTe: Sb nanoribbons
D Wu, Y Jiang, Y Zhang, J Li, Y Yu, Y Zhang… - Journal of Materials …, 2012 - pubs.rsc.org
Sb-doped ZnTe nanoribbons (NRs) with enhanced p-type conductivity were successfully
synthesized by a simple thermal co-evaporation method. Nanodevices, including nano-field …
synthesized by a simple thermal co-evaporation method. Nanodevices, including nano-field …
Interface properties and structural evolution of TiN/Si and TiN/GaN heterostructures
P Patsalas, S Logothetidis - Journal of applied physics, 2003 - pubs.aip.org
Spectroscopic ellipsometry (SE) is employed to study the evolution of microstructure,
stoichiometry, and electron-transport properties of titanium nitride (TiN) heterostructures …
stoichiometry, and electron-transport properties of titanium nitride (TiN) heterostructures …
Surface structure of molecular beam epitaxy (211) B HgCdTe
JD Benson, LA Almeida, MW Carmody… - Journal of electronic …, 2007 - Springer
The as-grown molecular beam epitaxy (MBE)(211) B HgCdTe surface has variable surface
topography, which is primarily dependent on substrate temperature and substrate/epilayer …
topography, which is primarily dependent on substrate temperature and substrate/epilayer …
Formation and optical properties of CdTe self-assembled quantum rings with electronic states embedded in ZnTe barriers
Atomic force microscopy (AFM) measurements were carried out to investigate the structural
properties of CdTe/ZnTe quantum rings (QRs), and photoluminescence (PL) measurements …
properties of CdTe/ZnTe quantum rings (QRs), and photoluminescence (PL) measurements …
Dimensional transition of CdxZn1− xTe nanostructures grown on ZnTe layers
The atomic force microscopy images showed that the dimensional structural transformation
from Cd x Zn 1− x Te quantum dots (QDs) with Cd mole fractions of 0.5 and 0.6 to Cd x Zn 1 …
from Cd x Zn 1− x Te quantum dots (QDs) with Cd mole fractions of 0.5 and 0.6 to Cd x Zn 1 …
Dimensional structural transition in CdTe∕ CdxZn1− xTe nanostructures
CdTe nanostructures were grown on Cd x Zn 1− x Te buffer layers by using molecular-beam
epitaxy and atomic-layer epitaxy. The atomic force microscopy image showed that uniform …
epitaxy and atomic-layer epitaxy. The atomic force microscopy image showed that uniform …
Formation mode of self-assembled CdTe quantum dots directly grown on GaAs substrates
Atomic force microscopy (AFM) measurements were carried out to investigate the formation
of CdTe quantum dots (QDs) grown on GaAs substrates by using molecular beam epitaxy …
of CdTe quantum dots (QDs) grown on GaAs substrates by using molecular beam epitaxy …
Correlation between the atomic structures and the misorientation angles of [0001]-tilt grain boundaries at triple junctions in ZnO thin films grown on Si substrates
The correlation between the atomic structures and the misorientation angles of [0001]-tilt
grain boundaries at triple junctions in ZnO thin films grown on Si substrates was investigated …
grain boundaries at triple junctions in ZnO thin films grown on Si substrates was investigated …