Electronic states in disordered conductors on the verge of localization are predicted to
exhibit critical spatial characteristics indicative of the proximity to a metal-insulator phase …

Local manipulation of electric fields at the atomic scale may enable new methods for
quantum transport and creates new opportunities for field control of ferromagnetism and spin …

Scaling of Si-based nanoelectronics has reached the regime where device function is
affected not only by the presence of individual dopants, but also by their positions in the …

We show that scanning tunneling microscopy (STM) images of subsurface Mn atoms in
GaAs are formed by hybridization of the impurity state with intrinsic surface states. They …

The electronic structure of the (Ga, Mn) As,(Ga, Mn) N, and (Ga, Gd) N, diluted magnetic
semiconductors (DMSs) were investigated theoretically from first principles, using the fully …

Atomic-level qubits in silicon are attractive candidates for large-scale quantum computing;
however, their quantum properties and controllability are sensitive to details such as the …

We investigate zinc-blende phase Al 0.75 Mn 0.25 Y (Y= N, P, As) compounds using full-
potential linear-augmented-plane wave plus local-orbital method. For computing structural …

Measurements of the local density of states of individual acceptors in III–V semiconductors
show that the symmetry of the acceptor states strongly depends on the depth of the atom …

Motivated by recent scanning tunnel microscopy (STM) experiments, we present a
theoretical study of the electronic and magnetic properties of the Mn-induced acceptor level …

Scanning tunneling spectroscopy was performed at low temperature on buried manganese
(Mn) acceptors below the (110) surface of gallium arsenide. The main Mn-induced features …