New Opportunities for High‐Performance Source‐Gated Transistors Using Unconventional Materials

G Wang, X Zhuang, W Huang, J Yu, H Zhang… - Advanced …, 2021 - Wiley Online Library
Abstract Source‐gated transistors (SGTs), which are typically realized by introducing a
source barrier in staggered thin‐film transistors (TFTs), exhibit many advantages over …

Fundamentals of organic anti‐ambipolar ternary inverters

CH Kim, R Hayakawa… - Advanced Electronic …, 2020 - Wiley Online Library
Digital logic accommodating more than two data levels is at the forefront of future high‐
information‐density electronics. The fundamental mechanisms of the organic ternary …

High-performance organic source-gated transistors enabled by the indium-tin oxide–diketopyrrolopyrrole polymer interface

H Lee, YE Kim, J Bae, S Jung… - ACS applied materials …, 2023 - ACS Publications
Source-gated transistors are a new driver of low-power high-gain thin-film electronics.
However, source-gated transistors based on organic semiconductors are not widely …

Organic-semiconductor nanoarchitectonics for multi-valued logic circuits with ideal transfer characteristics

SW Jo, J Choi, R Hayakawa, Y Wakayama… - Journal of Materials …, 2021 - pubs.rsc.org
We introduce a rational design approach to high-performance multi-valued logic circuits.
Taking an organic-based ternary inverter as a model system, robust input parameters to a …

Ultra-high gain diffusion-driven organic transistor

F Torricelli, L Colalongo, D Raiteri… - Nature …, 2016 - nature.com
Emerging large-area technologies based on organic transistors are enabling the fabrication
of low-cost flexible circuits, smart sensors and biomedical devices. High-gain transistors are …

Low-field behavior of source-gated transistors

JM Shannon, RA Sporea… - IEEE transactions on …, 2013 - ieeexplore.ieee.org
A physical description of low-field behavior of a Schottky source-gated transistor (SGT) is
outlined where carriers crossing the source barrier by thermionic emission are restricted by …

N-type printed organic source-gated transistors with high intrinsic gain

Y Hemmi, Y Ikeda, RA Sporea, Y Takeda, S Tokito… - Nanomaterials, 2022 - mdpi.com
Source-gated transistors (SGTs) are emerging devices enabling high-gain single-stage
amplifiers with low complexity. To date, the p-type printed organic SGT (OSGT) has been …

Printed 700 V/V Gain Amplifiers Based on Organic Source‐Gated Transistors with Field Plates

Y Hemmi, Y Ikeda, RA Sporea, S Inoue… - Advanced Electronic …, 2023 - Wiley Online Library
Printed amplifiers are promising components for flexible and wearable devices. The circuits
need to have small footprint, high amplification, and low power consumption, which is not …

Organic metal engineering for enhanced field-effect transistor performance

R Pfattner, C Rovira, M Mas-Torrent - Physical Chemistry Chemical …, 2015 - pubs.rsc.org
A key device component in organic field-effect transistors (OFETs) is the organic
semiconductor/metal interface since it has to ensure efficient charge injection. Traditionally …

Electric-field enhanced thermionic emission model for carrier injection mechanism of organic field-effect transistors: understanding of contact resistance

J Li, W Ou-Yang, M Weis - Journal of Physics D: Applied Physics, 2016 - iopscience.iop.org
We developed an electric-field enhanced thermionic emission model combined with an
equivalent circuit for a three-terminal organic transistor structure to interpret the gate-voltage …