Spintronic devices: a promising alternative to CMOS devices
The field of spintronics has attracted tremendous attention recently owing to its ability to offer
a solution for the present-day problem of increased power dissipation in electronic circuits …
a solution for the present-day problem of increased power dissipation in electronic circuits …
Towards oxide electronics: a roadmap
At the end of a rush lasting over half a century, in which CMOS technology has been
experiencing a constant and breathtaking increase of device speed and density, Moore's …
experiencing a constant and breathtaking increase of device speed and density, Moore's …
Future perspectives for spintronic devices
A Hirohata, K Takanashi - Journal of Physics D: Applied Physics, 2014 - iopscience.iop.org
Spintronics is one of the emerging research fields in nanotechnology and has been growing
very rapidly. Studies of spintronics were started after the discovery of giant …
very rapidly. Studies of spintronics were started after the discovery of giant …
Magnetoresistive sensor development roadmap (non-recording applications)
C Zheng, K Zhu, SC De Freitas… - IEEE Transactions …, 2019 - ieeexplore.ieee.org
Magnetoresistive (MR) sensors have been identified as promising candidates for the
development of high-performance magnetometers due to their high sensitivity, low cost, low …
development of high-performance magnetometers due to their high sensitivity, low cost, low …
Direct observation of half-metallicity in the Heusler compound Co2MnSi
Ferromagnetic thin films of Heusler compounds are highly relevant for spintronic
applications owing to their predicted half-metallicity, that is, 100% spin polarization at the …
applications owing to their predicted half-metallicity, that is, 100% spin polarization at the …
Room-temperature magnetic topological Weyl fermion and nodal line semimetal states in half-metallic Heusler Co2TiX (X=Si, Ge, or Sn)
Abstract Topological semimetals (TSMs) including Weyl semimetals and nodal-line
semimetals are expected to open the next frontier of condensed matter and materials …
semimetals are expected to open the next frontier of condensed matter and materials …
Magnetic anisotropy, exchange and damping in cobalt-based full-Heusler compounds: an experimental review
S Trudel, O Gaier, J Hamrle… - Journal of Physics D …, 2010 - iopscience.iop.org
Cobalt-based full-Heusler compounds with composition Co 2 M'Z (where M'is a transition
metal and Z is a main group element) are attracting attention due to their predicted half …
metal and Z is a main group element) are attracting attention due to their predicted half …
Half-metalicity, mechanical, optical, thermodynamic, and thermoelectric properties of full Heusler alloys Co2TiZ (Z = Si; Ge; Sn)
Abstract We have predicted Co2TiZ (Z= Si; Ge and Sn) full Heusler alloys are being a half-
metallic ferromagnet by the first-principle calculations using FPLAPW based on DFT. The …
metallic ferromagnet by the first-principle calculations using FPLAPW based on DFT. The …
Mechanism of large magnetoresistance in devices with current perpendicular to the plane
Y Sakuraba, K Izumi, T Iwase, S Bosu, K Saito… - Physical Review B …, 2010 - APS
Fully epitaxial current-perpendicular-to-plane giant magnetoresistance (MR) devices with
half-metallic Co 2 MnSi (CMS) electrodes and a Ag spacer were fabricated to investigate the …
half-metallic Co 2 MnSi (CMS) electrodes and a Ag spacer were fabricated to investigate the …
Giant tunneling magnetoresistance up to 330% at room temperature in sputter deposited Co2FeAl/MgO/CoFe magnetic tunnel junctions
W Wang, H Sukegawa, R Shan, S Mitani… - Applied Physics …, 2009 - pubs.aip.org
Magnetoresistance ratio up to 330% at room temperature (700% at 10 K) has been obtained
in a spin-valve-type magnetic tunnel junction (MTJ) consisting of a full-Heusler alloy Co 2 …
in a spin-valve-type magnetic tunnel junction (MTJ) consisting of a full-Heusler alloy Co 2 …