Worldwide efforts are underway to integrate semiconductors and magnetic materials, aiming
to create a revolutionary and energy-efficient information technology in which digital data …

In silicon spintronics, the unique qualities of ferromagnetic materials are combined with
those of silicon, aiming at creating an alternative, energy-efficient information technology in …

We detected the spin polarization due to charge flow in the spin nondegenerate surface
state of a three-dimensional topological insulator by means of an all-electrical method. The …

Spintronics is an emergent interdisciplinary topic for the studies of spin-based, other than or
in addition to charge-only-based physical phenomena. Since the discovery of giant …

We study all of the leading-order contributions to spin relaxation of conduction electrons in
silicon due to the electron-phonon interaction. Using group theory, the k· p perturbation …

Electron spin attracts much attention as an alternative to the electron charge degree of
freedom for low-power reprogrammable logic and non-volatile memory applications. Silicon …

The observed dependence of spin relaxation on the identity of the donor atom in n-type
silicon has remained without explanation for decades and poses a long-standing open …

Using high-quality Fe 3 Si/n+-Ge Schottky-tunnel-barrier contacts, we study spin
accumulation in an n-type germanium (n-Ge) channel. In the three-or two-terminal voltage …

The MgO thickness dependence of Hanle signals in Co 50 Fe 50/MgO/n-Si tunnel junctions
was investigated using a three-terminal geometry. The observed Hanle signal is several …

Spin injection in high-quality epitaxial M n 5 G e 3 Schottky contacts on n-type Ge has been
investigated using a three-terminal Hanle effect measurement. Clear Hanle and inverted …