Contact resistance and interfacial engineering: Advances in high-performance 2D-TMD based devices
The development of advanced electronic devices is contingent upon sustainable material
development and pioneering research breakthroughs. Traditional semiconductor-based …
development and pioneering research breakthroughs. Traditional semiconductor-based …
Two-Dimensional Organic–Inorganic van der Waals Hybrids
F Cui, V García-López, Z Wang, Z Luo, D He… - Chemical …, 2024 - ACS Publications
Two-dimensional organic–inorganic (2DOI) van der Waals hybrids (vdWhs) have emerged
as a groundbreaking subclass of layer-stacked (opto-) electronic materials. The …
as a groundbreaking subclass of layer-stacked (opto-) electronic materials. The …
High-Performance Edge-Contact Monolayer Molybdenum Disulfide Transistors 高性能边缘接触单层二硫化钼晶体管
Edge contact is essential for achieving the ultimate device pitch scaling of stacked
nanosheet transistors with monolayer 2-dimensional (2D) channels. However, due to large …
nanosheet transistors with monolayer 2-dimensional (2D) channels. However, due to large …
Fundamental Understanding of Interface Chemistry and Electrical Contact Properties of Bi and MoS2
The interface properties and thermal stability of bismuth (Bi) contacts on molybdenum
disulfide (MoS2) shed light on their behavior under various deposition conditions and …
disulfide (MoS2) shed light on their behavior under various deposition conditions and …
[HTML][HTML] High-Performance Edge-Contact Monolayer Molybdenum Disulfide Transistors
Edge contact is essential for achieving the ultimate device pitch scaling of stacked
nanosheet transistors with monolayer 2-dimensional (2D) channels. However, due to large …
nanosheet transistors with monolayer 2-dimensional (2D) channels. However, due to large …
[HTML][HTML] Effect of physical vapor deposition on contacts to 2D MoS2
M Saifur Rahman, AD Agyapong… - Journal of Applied …, 2024 - pubs.aip.org
Two-dimensional (2D) molybdenum disulfide (MoS 2) holds immense promise for next-
generation electronic applications. However, the role of contact deposition at the …
generation electronic applications. However, the role of contact deposition at the …
[HTML][HTML] Contact engineering for two-dimensional van der Waals semiconductors
J Tang, S Li, L Zhan, S Li - Materials Today Electronics, 2024 - Elsevier
Abstract Two-dimensional (2D) semiconductors represent the most promising post-silicon
channel materials for ultimate electronics. However, the unique atomic thickness renders …
channel materials for ultimate electronics. However, the unique atomic thickness renders …
Contact Resistance Optimization in MoS Field-Effect Transistors through Reverse Sputtering-Induced Structural Modifications
Two-dimensional material (2DM)-based field-effect transistors (FETs), such as molybdenum
disulfide (MoS ${_2} $)-FETs, have gained significant attention for their potential for ultra …
disulfide (MoS ${_2} $)-FETs, have gained significant attention for their potential for ultra …
Hybrid Contact for High‐Performance MoS2 Transistors via Hard‐Mask Scanning Probe Lithography
Z Chen, W Zhu, L Xu, M An, X Zheng - Advanced Materials … - Wiley Online Library
The scaling down of transistors in silicon‐based complementary metal‐oxide‐
semiconductor (CMOS) technology has reached critical limits, necessitating the exploration …
semiconductor (CMOS) technology has reached critical limits, necessitating the exploration …
High performance ultrascaled monolayer/bilayer WSe2 FETs achieved by immaculate 2D/2D contacts
Achieving low contact resistance in p-type transistors remains a critical challenge when
using transition-metal dichalcogenides (TMDs) as channel materials. Deposition of high …
using transition-metal dichalcogenides (TMDs) as channel materials. Deposition of high …