For the first time, we propose a stackable vertical channel-all-around (CAA) In–Ga–Zn-O
field-effect transistor (IGZO FET) for high-density 4F 2 and long-retention 2T0C dynamic …

Abstract In this paper, In0. 22ZnδSn0. 78− δO1. 89− δ (δ= 0.55) films with a single spinel
phase are successfully grown at the low temperature of 300° C through careful cation …

A way to obtain highly ordered and thermally stable crystalline In–Ga–O (IGO) thin films is
reported by atomic layer deposition with novel bulky dimethyl [N‐(tert‐butyl)− 2‐methoxy‐2 …

Polycrystalline indium–gallium–zinc oxide (IGZO) in the spinel phase was obtained by
physical vapor deposition (PVD), using reactive sputtering from an IGZO target with …

The memory characteristics of a flash memory device using c-axis aligned crystal indium
gallium zinc oxide (CAAC-IGZO) thin film as a channel material were demonstrated. The …

Ultrathin indium oxide films show great potential as channel materials of complementary
metal oxide semiconductor back-end-of-line transistors due to their high carrier mobility …

Contact resistance () is a major limitation to the scaling of amorphous indium-gallium-zinc-
oxide (a-IGZO) transistors, and it has not been thoroughly investigated on devices with sub …

Facile phase transitions and electrical degradation of amorphous oxide semiconductors due
to a high thermal budget have significantly limited their dynamic random-access memory …

Total-ionizing-dose (TID) effects are evaluated in top-gated IGZO thin-film transistors (TFTs)
irradiated with different gate biases. Negative-bias irradiation leads to worst case …

The photoresponse of an oxide semiconductor is influenced by lattice distortion, which can
be adjusted through atomic coordination status. Typically, the modulation of atomic …