A junctionless gate-all-around silicon nanowire FET of high linearity and its potential applications
The linearity of a gate-all-around junctionless silicon nanowire (SiNW) FET has been
analyzed. The SiNW FET shows a perfectly linear I_D–V_G relation and a nearly zero output …
analyzed. The SiNW FET shows a perfectly linear I_D–V_G relation and a nearly zero output …
Analytical modeling of glucose biosensors based on carbon nanotubes
In recent years, carbon nanotubes have received widespread attention as promising carbon-
based nanoelectronic devices. Due to their exceptional physical, chemical, and electrical …
based nanoelectronic devices. Due to their exceptional physical, chemical, and electrical …
The ultimate ballistic drift velocity in carbon nanotubes
Abstract jats: pThe carriers in a carbon nanotube (CNT), like in any quasi-1-dimensional
(Q1D) nanostructure, have analog energy spectrum only in the quasifree direction; while the …
(Q1D) nanostructure, have analog energy spectrum only in the quasifree direction; while the …
[图书][B] Nanoelectronics: Quantum engineering of low-dimensional nanoensembles
VK Arora - 2018 - taylorfrancis.com
Brings the Band Structure of Carbon-Based Devices into the Limelight A shift to carbon is
positioning biology as a process of synthesis in mainstream engineering. Silicon is quickly …
positioning biology as a process of synthesis in mainstream engineering. Silicon is quickly …
Design and analysis of a new carbon nanotube full adder cell
MH Ghadiry, A Abd Manaf, MT Ahmadi… - Journal of …, 2011 - Wiley Online Library
A novel full adder circuit is presented. The main aim is to reduce power delay product (PDP)
in the presented full adder cell. A new method is used in order to design a full‐swing full …
in the presented full adder cell. A new method is used in order to design a full‐swing full …
High-field transport in a graphene nanolayer
High-field electron transport properties in a two-dimensional nanolayer are studied by an
application of the anisotropic nonequilibrium distribution function, a natural extension of the …
application of the anisotropic nonequilibrium distribution function, a natural extension of the …
Transition of equilibrium stochastic to unidirectional velocity vectors in a nanowire subjected to a towering electric field
VK Arora, DCY Chek, MLP Tan… - Journal of applied …, 2010 - pubs.aip.org
The equilibrium Fermi–Dirac distribution is revealed to transform to an asymmetric
distribution in a very high electric field where the energy gained (or lost) in a mean free path …
distribution in a very high electric field where the energy gained (or lost) in a mean free path …
The drift response to a high-electric-field in carbon nanotubes
The carrier statistics in carbon nanotubes (CNTs) with nonparabolic energy spectrum is
studied in order to predict the ultimate (intrinsic) drift velocity as a function of temperature …
studied in order to predict the ultimate (intrinsic) drift velocity as a function of temperature …
Scaling performance of Ga2O3/GaN nanowire field effect transistor
A three-dimensional finite element solver is applied to investigate the performance of Ga 2 O
3/GaN nanowire transistors. Experimental nanowire results of 50 nm gate length are …
3/GaN nanowire transistors. Experimental nanowire results of 50 nm gate length are …
Quantum confinement effect on trilayer graphene nanoribbon carrier concentration
In this study, one-dimensional vision of carrier movement based on the band structure of
trilayer graphene nanoribbon in the presence of a perpendicular electric field is employed …
trilayer graphene nanoribbon in the presence of a perpendicular electric field is employed …