Spintronics: Fundamentals and applications

I Žutić, J Fabian, SD Sarma - Reviews of modern physics, 2004 - APS
Spintronics, or spin electronics, involves the study of active control and manipulation of spin
degrees of freedom in solid-state systems. This article reviews the current status of this …

Spin dynamics in semiconductors

MW Wu, JH Jiang, MQ Weng - Physics Reports, 2010 - Elsevier
This article reviews the current status of spin dynamics in semiconductors which has
achieved much progress in the recent years due to the fast growing field of semiconductor …

Spin memristive systems: Spin memory effects in semiconductor spintronics

YV Pershin, M Di Ventra - Physical Review B—Condensed Matter and …, 2008 - APS
Recently, in addition to the well-known resistor, capacitor, and inductor, a fourth passive
circuit element, named memristor, has been identified following theoretical predictions. The …

Electrical injection and detection of spin-polarized electrons in silicon through an Fe3Si/Si Schottky tunnel barrier

Y Ando, K Hamaya, K Kasahara, Y Kishi… - Applied Physics …, 2009 - pubs.aip.org
We demonstrate electrical injection and detection of spin-polarized electrons in silicon (Si)
using epitaxially grown Fe 3 Si/Si Schottky-tunnel-barrier contacts. By an insertion of a δ …

Ferromagnetic germanide in Ge nanowire transistors for spintronics application

J Tang, CY Wang, MH Hung, X Jiang, LT Chang, L He… - ACS …, 2012 - ACS Publications
To explore spintronics applications for Ge nanowire heterostructures formed by thermal
annealing, it is critical to develop a ferromagnetic germanide with high Curie temperature …

[图书][B] Spintronic materials and technology

Y Xu, S Thompson - 2006 - taylorfrancis.com
Few books exist that cover the hot field of second-generation spintronic devices, despite
their potential to revolutionize the IT industry. Compiling the obstacles and progress of spin …

Emission properties of InGaAs/GaAs heterostructures with δ⟨ Mn⟩-doped barrier

MV Dorokhin, YA Danilov, PB Demina… - Journal of Physics D …, 2008 - iopscience.iop.org
Light-emitting device heterostructures with a δ⟨ Mn⟩-doped layer inserted between the
Schottky contact and near-surface InGaAs/GaAs quantum well (QW) have been fabricated …

Epitaxially grown MnAs∕ GaAs lateral spin valves

D Saha, M Holub, P Bhattacharya, YC Liao - Applied physics letters, 2006 - pubs.aip.org
The authors report magnetoresistance of lateral spin valves fabricated from an epitaxially
grown Mn As∕ Ga As heterostructure and utilizing a Schottky tunnel barrier for efficient spin …

Anisotropic temperature-dependent current densities in vicinal

M Djupmyr, G Cristiani, HU Habermeier… - Physical Review B …, 2005 - APS
Thin epitaxial films of YBa 2 Cu 3 O 7− δ grown on vicinal cut substrates exhibit a substantial
anisotropy of the critical current density jc in the film plane. By means of a quantitative …

Altermagnetic Schottky Contact

YS Ang - arXiv preprint arXiv:2310.11289, 2023 - arxiv.org
Altermagnet is an emerging antiferromagnetic material subclass that exhibits spin-splitting in
momentum space without net global magnetization and spin-orbit-coupling effect. In this …