Gallium Oxide has undergone rapid technological maturation over the last decade, pushing
it to the forefront of ultra-wide band gap semiconductor technologies. Maximizing the …

We report a vertical (001) β-Ga2O3 field-plated (FP) Schottky barrier diode (SBD) with a
novel extreme permittivity dielectric field oxide. A thin drift layer of 1.7 μm was used to …

Abstract β-Ga 2 O 3 Schottky barrier diodes have undergone rapid progress in research and
development for power electronic applications. This paper reviews state-of-the-art β-Ga 2 O …

We report a vertical β-Ga2O3 Schottky barrier diode (SBD) with BaTiO3 as field plate oxide
on a low doped thick epitaxial layer exhibiting 2.1 kV breakdown voltage. A thick drift layer of …

Beta-gallium oxide (β-Ga2O3) is a material with a history of research and development
spanning about 70 years; however, it has attracted little attention as a semiconductor for a …

β-Ga 2 O 3 is actively touted as the next ultrawide bandgap material for power electronics.
To fully utilize its high intrinsic critical electric field, development of high-quality robust large …

In this study, the impact of varying the thickness of the Al2O3 interlayer dielectric on the
electrical characteristics of BaTiO3/III‐nitride transistors is investigated. In the findings, it is …

This study aim is to investigate the ternary composites dielectric behavior and
experimentally validate the predictive model that simplifies ternary models into binary ones …

Abstract Gallium Nitride (GaN) has emerged as a highly promising semiconductor material
for power applications due to its exceptional properties, including a wide bandgap of 3.4 eV …

We introduce a high permittivity dielectric (BaTiO 3) integrated field-plate overlap design on
hybrid AlGaN/GaN lateral Schottky barrier diodes for efficient field management to achieve …