Abstract We consider the Nernst–Planck–Navier–Stokes system in a bounded domain of R
d, d= 2, 3 with general nonequilibrium Dirichlet boundary conditions for the ionic …

In this book a hierarchy of macroscopic models for semiconductor devices is presented.
Three classes of models are studied in detail: isentropic drift-diffusion equations, energy …

We consider ionic electrodiffusion in fluids, described by the Nernst–Planck–Navier–Stokes
system in bounded domains, in two dimensions, with Dirichlet boundary conditions for the …

This paper is a continuation of [3] by the same authors to study the problem of global
existence of strong solutions for the Shigesada-Kawasaki-Teramoto model. We shall prove …

A positivity-preserving numerical scheme for a strongly coupled cross-diffusion model for
two competing species is presented, based on a semi-discretization in time. The variables …

The time-dependent equations for a charged gas or fluid consisting of several components,
exposed to an electric field, are considered. These equations form a system of strongly …

We consider ionic electrodiffusion in fluids, described by the Nernst–Planck–Navier–Stokes
system. We prove that the system has global smooth solutions for arbitrary smooth data in …

We consider the limit of vanishing Debye length for ionic diffusion in fluids, described by the
Nernst–Planck–Navier–Stokes system. In the asymptotically stable cases of blocking …

A system of drift-diffusion equations for the electron, hole, and oxygen vacancy densities in a
semiconductor, coupled to the Poisson equation for the electric potential, is analyzed in a …

We consider a coupled system of Navier--Stokes and Nernst--Planck equations, describing
the evolution of the velocity and the concentration fields of dissolved constituents in an …