Recent advances in light sources on silicon

Y Han, H Park, J Bowers, KM Lau - Advances in Optics and Photonics, 2022 - opg.optica.org
Realizing efficient on-chip light sources has long been the “holy-grail” for Si-photonics
research. Several important breakthroughs were made in this field in the past few years. In …

Waveguide coupled III-V photodiodes monolithically integrated on Si

P Wen, P Tiwari, S Mauthe, H Schmid, M Sousa… - Nature …, 2022 - nature.com
The seamless integration of III-V nanostructures on silicon is a long-standing goal and an
important step towards integrated optical links. In the present work, we demonstrate scaled …

Ultra-low threshold continuous-wave quantum dot mini-BIC lasers

H Zhong, Y Yu, Z Zheng, Z Ding, X Zhao… - Light: Science & …, 2023 - nature.com
Highly compact lasers with ultra-low threshold and single-mode continuous wave (CW)
operation have been a long sought-after component for photonic integrated circuits (PICs) …

Recent Progress in III–V Photodetectors Grown on Silicon

C Zeng, D Fu, Y Jin, Y Han - Photonics, 2023 - mdpi.com
An efficient photodetector (PD) is a key component in silicon-based photonic integrated
circuits (PICs). III–V PDs with low dark current density, large bandwidth, and wide operation …

Heterogeneous integration of III–V materials by direct wafer bonding for high-performance electronics and optoelectronics

D Caimi, P Tiwari, M Sousa… - IEEE Transactions on …, 2021 - ieeexplore.ieee.org
III-V materials, such as InGaAs and InP, are highly attractive for high-performance
electronics and optoelectronics owning to their high carrier mobilities and potential for …

Multiple resonant modes coupling enabled strong CD response in a chiral metasurface

S Zong, D Zeng, G Liu, Y Wang, Z Liu, J Chen - Optics Express, 2022 - opg.optica.org
The chiral structures with strong circular dichroism (CD) response and narrow linewidth are
desirable in chiral sensing, circularly-polarized light detection, and polarization imaging …

Lateral tunnel epitaxy of GaAs in lithographically defined cavities on 220 nm silicon-on-insulator

Z Yan, BP Ratiu, W Zhang, O Abouzaid… - Crystal Growth & …, 2023 - ACS Publications
Current heterogeneous Si photonics usually bond III–V wafers/dies on a silicon-on-insulator
(SOI) substrate in a back-end process, whereas monolithic integration by direct epitaxy …

III–V infrared emitters on Si: fabrication concepts, device architectures and down-scaling with a focus on template-assisted selective epitaxy

P Tiwari, NV Trivino, H Schmid… - Semiconductor Science …, 2023 - iopscience.iop.org
The local integration of III–Vs on Si is relevant for a wide range of applications in electronics
and photonics, since it combines a mature and established materials platform with desired …

In-plane monolithic integration of scaled iii-v photonic devices

M Scherrer, N Vico Triviño, S Mauthe, P Tiwari… - Applied Sciences, 2021 - mdpi.com
It is a long-standing goal to leverage silicon photonics through the combination of a low-cost
advanced silicon platform with III-V-based active gain material. The monolithic integration of …

Single-Mode Laser in the Telecom Range by Deterministic Amplification of the Topological Interface Mode

M Scherrer, CW Lee, H Schmid, KE Moselund - ACS photonics, 2024 - ACS Publications
Photonic integrated circuits are paving the way for novel on-chip functionalities with diverse
applications in communication, computing, and beyond. The integration of on-chip light …