Wide bandgap oxide semiconductors constitute a unique class of materials that combine
properties of electrical conductivity and optical transparency. They are being widely used as …

Surface electromyography (sEMG) is used to detect and analyze human muscle
biopotential. Recently, flexible noninvasive electrodes (FNEs) have emerged to extract …

A pixel circuit and a gate driver on array for light‐emitting display are presented. By
simultaneously utilizing top‐gate n‐type oxide and p‐type low‐temperature polycrystalline …

Indium oxide (InO x) thin films have attractive carrier transport properties for oxide
semiconductors because of the large isotropic 5 s orbital overlap. In this study, InO x films …

In this article, heterogeneous complementary field-effect-transistor (CFET) constructed by
vertically stacking amorphous indium gallium zinc oxide (a-IGZO) n-channel on poly-Si p …

Due to the untiring efforts of scientists and researchers on oxide semiconductor materials,
processes, and devices, the applications for oxide-based thin film transistors (TFTs) have …

Atomic layer deposition (ALD) is a promising deposition method to precisely control the
thickness and metal composition of oxide semiconductors, making them attractive materials …

A high-performance CMOS operational amplifier (op-amp) has been demonstrated with the
low-temperature poly-Si oxide (LTPO) thin-film transistors (TFTs). The p-type TFT exhibits …

This article proposes a new pixel circuit that is operated at a low frame rate using low-
temperature polycrystalline silicon thin-film transistors (TFTs) for use in active-matrix organic …

In this paper, an AMOLED pixel circuit based on low-temperature poly-crystalline silicon and
oxide (LTPO) thin-film transistors (TFTs) hybrid technology is proposed, which features only …