Sensitivity analysis of Al0. 3Ga0. 7N/GaN dielectric modulated MOSHEMT biosensor
Emerging and newly proposed devices integrate various materials at different scales (from
nano to submicron), which reveals sensor response. Prefab simulation is in great demand to …
nano to submicron), which reveals sensor response. Prefab simulation is in great demand to …
Decreased trap density and lower current collapse in AlGaN/GaN HEMTs by adding a magnetron-sputtered AlN gate
M Jia, HN Zhang, X Wang, CY Liu, TF Pu… - Journal of Physics D …, 2022 - iopscience.iop.org
In this paper, AlN films grown by magnetron sputtering method have been proposed as the
gate insulator layer of AlGaN/GaN high electron mobility transistors (HEMTs) to decrease …
gate insulator layer of AlGaN/GaN high electron mobility transistors (HEMTs) to decrease …
Enhancement in analog/RF and power performance of underlapped dual-gate GaN-based MOSHEMTs with quaternary InAlGaN barrier of varying widths
H Mukherjee, M Kar, A Kundu - Journal of Electronic Materials, 2022 - Springer
An underlapped dual-gate (U-DG) quaternary In 0.05 Al 0.75 Ga 0.2 N/GaN metal–oxide–
semiconductor high-electron-mobility transistor (MOS-HEMT) and a conventional ternary Al …
semiconductor high-electron-mobility transistor (MOS-HEMT) and a conventional ternary Al …
Drain current sensitivity analysis using a surface potential-based analytical model for AlGaN/GaN double gate MOS-HEMT
P Sriramani, N Mohankumar, Y Prasamsha - Micro and Nanostructures, 2024 - Elsevier
In this research, a surface potential-based drain current model for an AlGaN/GaN
symmetrical double-gate metal oxide semiconductor high electron mobility transistor (DG …
symmetrical double-gate metal oxide semiconductor high electron mobility transistor (DG …
Analog/RF and power performance analysis of an underlap DG AlGaN/GaN based high-K dielectric MOS-HEMT
This paper exemplifies an exhaustive, figurative and subjective study on the RF performance
and DC characteristics analysis of an Underlapped Double-Gate (U-DG) AlGaN/GaN …
and DC characteristics analysis of an Underlapped Double-Gate (U-DG) AlGaN/GaN …
Vertical GaN/InGaN/GaN heterostructure tunnel field-effect transistor: DC and analog/RF performance
This work reports an n-type GaN/InGaN/GaN heterostructure vertical double-gate tunnel field-
effect transistor (VTFET) using exhaustive calibrated simulation for the first time …
effect transistor (VTFET) using exhaustive calibrated simulation for the first time …
Impact of varying channel length on Analog/RF performances in a novel n-type Silicon-based DG-JLT.
Shrinking MOSFETs suffer performance hits due to short-channel effects and leakage.
Junctionless transistors JLTs emerge as promising alternatives due to simpler fabrication …
Junctionless transistors JLTs emerge as promising alternatives due to simpler fabrication …
Influence of Varying Recessed Gate Height on Analog/RF Performances of a Novel Normally-Off Underlapped Double Gate AlGaN/GaN-based MOS-HEMT
C Chakraborty, A Kundu - IETE Journal of Research, 2024 - Taylor & Francis
Current transistor technology has issues with off-state current which reduces power
efficiency. The paper presents a novel Normally-off Underlapped Dual Gate (U-DG) …
efficiency. The paper presents a novel Normally-off Underlapped Dual Gate (U-DG) …
[HTML][HTML] Numerical Study of 2DEG Carrier Density of Quaternary AlInGaN-Based T-Gate MOSHEMT Grown on UWBG-β-Ga2O3 Substrate
N Amina, T Zine-eddine, M Zitouni, S Okba… - Power Electronic Devices …, 2025 - Elsevier
This paper presents a numerical simulation study of an E-mode AlInGaN/AlN/GaN metal
oxide semiconductor high electron mobility transistor (MOSHEMT) grown on an ultra-wide …
oxide semiconductor high electron mobility transistor (MOSHEMT) grown on an ultra-wide …
A comparative analysis of analog performances of underlapped dual gate AlGaN/GaN based MOS-HEMT and Schottky-HEMT
H Mukherjee, R Dasgupta, M Kar… - 2020 IEEE Calcutta …, 2020 - ieeexplore.ieee.org
This paper presents a comparative and analytical study on the basis of analog performances
of an Underlapped Dual Gate (U-DG) AlGaN/GaN MOS-HEMT with gate oxide and an U-DG …
of an Underlapped Dual Gate (U-DG) AlGaN/GaN MOS-HEMT with gate oxide and an U-DG …