extremely thin amorphous indium oxide transistors
Amorphous oxide semiconductor transistors have been a mature technology in display
panels for upward of a decade, and have recently been considered as promising back‐end …
panels for upward of a decade, and have recently been considered as promising back‐end …
Monolithic 3D integration as a pathway to energy-efficient computing and beyond: From materials and devices to architectures and chips
As emerging technologies like artificial intelligence (AI) and big data continue to evolve, the
demand for high-performance computing (HPC) has been increasing, driving the …
demand for high-performance computing (HPC) has been increasing, driving the …
Back-end-of-line-compatible scaled InGaZnO transistors by atomic layer deposition
In this work, we report on back-end-of-line (BEOL)-compatible InGaZnO indium gallium zinc
oxide (IGZO) thin film transistors (TFTs) with extreme scaled device dimension including …
oxide (IGZO) thin film transistors (TFTs) with extreme scaled device dimension including …
Study of the Energy Crossing Between Excited States Affected by the Electronegativity of Substituents for Three 4-Azido-1, 8-naphthalimide Derivatives
A Huang, H Xu, Z Xia, W Hao, D Wu… - The Journal of Physical …, 2024 - ACS Publications
Rapid detection of H2S is crucial for human physiological health and natural ecosystems. In
this study, the fluorescent sensing mechanisms of three 4-azido-1, 8-naphthalimide-based …
this study, the fluorescent sensing mechanisms of three 4-azido-1, 8-naphthalimide-based …
Strong Immunity to Drain-Induced Barrier Lowering in ALD-Grown Preferentially Oriented Indium Gallium Oxide Transistors
Drain-induced barrier lowering (DIBL) is one of the most critical obstacles degrading the
reliability of integrated circuits based on miniaturized transistors. Here, the effect of a …
reliability of integrated circuits based on miniaturized transistors. Here, the effect of a …
Universal PBTI Relaxation on the Negative VTH Shift in Oxide Semiconductor Transistors and New Insights
In this work, the positive bias temperature instability (PBTI) degradation of ZnO transistors by
atomic layer deposition (ALD) is systematically investigated by using an extended measure …
atomic layer deposition (ALD) is systematically investigated by using an extended measure …
Atomic Layer Deposition of WO3-Doped In2O3 for Reliable and Scalable BEOL-Compatible Transistors
Tungsten oxide (WO3) doped indium oxide (IWO) field-effect transistors (FET), synthesized
using atomic layer deposition (ALD) for three-dimensional integration and back-end-of-line …
using atomic layer deposition (ALD) for three-dimensional integration and back-end-of-line …
Effect of Single Spinel Phase Crystallization on Drain-Induced-Barrier-Lowering in Submicron Length IZTO Thin-Film Transistors
This study shows the effect of single spinel phase crystallization on drain-induced barrier
lowering (DIBL) of indium-zinc-tin-oxide (IZTO) thin-film transistors (TFTs) with submicron …
lowering (DIBL) of indium-zinc-tin-oxide (IZTO) thin-film transistors (TFTs) with submicron …
Indium zinc oxide nanosheet transistor with 2 nm channel thickness for monolithic three-dimensional integrated circuit
ZH Li, TC Chiang, YC Chen, HH Lee… - IEEE Electron …, 2023 - ieeexplore.ieee.org
We have successfully fabricated an amorphous indium zinc oxide (a-IZO) thin film transistor
(TFT) with a 2 nm-thick nanosheet channel, which demonstrated an impressive mobility of …
(TFT) with a 2 nm-thick nanosheet channel, which demonstrated an impressive mobility of …
Self-Aligned Top-Gate IGZO TFT with Stepped Structure for Suppressing Short Channel Effect
JK Lee, S An, SY Lee - IEEE Electron Device Letters, 2023 - ieeexplore.ieee.org
In this work, the self-aligned coplanar top gate In-Ga-Zn-O thin-film transistor with a stepped
substrate structure was investigated to suppress the short-channel effect. Usually, roll-off …
substrate structure was investigated to suppress the short-channel effect. Usually, roll-off …