GaN-based power high-electron-mobility transistors on Si substrates: from materials to devices
N Wu, Z Xing, S Li, L Luo, F Zeng… - … Science and Technology, 2023 - iopscience.iop.org
Conventional silicon (Si)-based power devices face physical limitations—such as switching
speed and energy efficiency—which can make it difficult to meet the increasing demand for …
speed and energy efficiency—which can make it difficult to meet the increasing demand for …
Monolithic integration of ultraviolet light emitting diodes and photodetectors on a p-GaN/AlGaN/GaN/Si platform
Q Lyu, H Jiang, KM Lau - Optics Express, 2021 - opg.optica.org
In this letter, we report the first demonstration of monolithically integrated ultraviolet (UV)
light emitting diodes (LEDs) and visible-blind UV photodetectors (PDs) employing the same …
light emitting diodes (LEDs) and visible-blind UV photodetectors (PDs) employing the same …
VT Shift and Recovery Mechanisms of p-GaN Gate HEMTs Under DC/AC Gate Stress Investigated by Fast Sweeping Characterization
R Wang, JM Lei, H Guo, R Li, DJ Chen… - IEEE Electron …, 2021 - ieeexplore.ieee.org
In this work, details of stress time dependent transient shift in p-GaN Gate HEMTs are
captured using a fast sweeping method. A minimum saturated shift () independent of stress …
captured using a fast sweeping method. A minimum saturated shift () independent of stress …
Gate-Bias Induced Threshold Voltage (VTH) Instability in PN Junction/AlGaN/GaN HEMT
Z Jiang, L Li, C Wang, J Zhao… - IEEE Transactions on …, 2022 - ieeexplore.ieee.org
In this work, we studied the threshold voltage () instability in E-mode pn junction
(PNJ)/AlGaN/GaN high-electron-mobility transistor (HEMT) using pulsed-measurement and …
(PNJ)/AlGaN/GaN high-electron-mobility transistor (HEMT) using pulsed-measurement and …
On-Chip Integrated High-Sensitivity Temperature Sensor Based on p-GaN/AlGaN/GaN Heterostructure
J Chang, Y Yin, J Du, H Wang, H Li… - IEEE Electron …, 2023 - ieeexplore.ieee.org
An on-chip integrated temperature sensor based on a-GaN/AlGaN/GaN heterostructure is
demonstrated. The sensor consists of a two-dimensional-electron-gas (2DEG) resistor and a …
demonstrated. The sensor consists of a two-dimensional-electron-gas (2DEG) resistor and a …
GaN Schottky barrier diode-based wideband and medium-power microwave rectifier for wireless power transmission
Y Li, TF Pu, XB Li, YR Zhong, LA Yang… - … on Electron Devices, 2020 - ieeexplore.ieee.org
This article presents a finger-type gallium nitride (GaN) Schottky barrier diode (SBD)-based
microwave rectifier with medium-power capacity and wide power bandwidth. A complete …
microwave rectifier with medium-power capacity and wide power bandwidth. A complete …
Investigation of thermally induced threshold voltage shift in normally-OFF p-GaN gate HEMTs
H Wang, Y Lin, J Jiang, D Dong, F Ji… - … on Electron Devices, 2022 - ieeexplore.ieee.org
In this article, the thermally induced threshold voltage () shift was investigated on two types
of normally-OFF p-GaN gate high-electron-mobility transistors (HEMTs), featuring either an …
of normally-OFF p-GaN gate high-electron-mobility transistors (HEMTs), featuring either an …
Evaluation on Temperature-Dependent Transient VT Instability in p-GaN Gate HEMTs under Negative Gate Stress by Fast Sweeping Characterization
R Wang, H Guo, Q Hou, J Lei, J Wang, J Xue, B Liu… - Micromachines, 2022 - mdpi.com
In this work, temperature-dependent transient threshold voltage (VT) instability behaviors in
p-GaN/AlGaN/GaN HEMTs, with both Schottky gate (SG) and Ohmic gate (OG), were …
p-GaN/AlGaN/GaN HEMTs, with both Schottky gate (SG) and Ohmic gate (OG), were …
Total-ionizing-dose radiation effect on dynamic threshold voltage in p-GaN gate HEMTs
In this article, total-ionizing-dose (TID) response for dynamic threshold voltage (in p-GaN
gate high electron mobility transistors (HEMTs) is studied. A nonmonotonic dependence of …
gate high electron mobility transistors (HEMTs) is studied. A nonmonotonic dependence of …
Electroluminescence and Gate Carrier Dynamics in a Schottky-type p-GaN Gate Double-Channel GaN HEMT
Electroluminescence (EL) of a Schottky-type-GaN gate double-channel (DC-) GaN high-
electron-mobility transistor (HEMT) was investigated to understand the mechanism of the …
electron-mobility transistor (HEMT) was investigated to understand the mechanism of the …