Ion beams in materials processing and analysis

B Schmidt, K Wetzig - 2012 - books.google.com
A comprehensive review of ion beam application in modern materials research is provided,
including the basics of ion beam physics and technology. The physics of ion-solid …

Designing a wind energy harvester for connected vehicles in green cities

ZA Khan, HHR Sherazi, M Ali, MA Imran, IU Rehman… - Energies, 2021 - mdpi.com
Electric vehicles (EVs) have recently gained momentum as an integral part of the Internet of
Vehicles (IoV) when authorities started expanding their low emission zones (LEZs) in an …

Performance and breakdown characteristics of irradiated vertical power GaN pin diodes

MP King, AM Armstrong, JR Dickerson… - … on Nuclear Science, 2015 - ieeexplore.ieee.org
Electrical performance and defect characterization of vertical GaN PiN diodes before and
after irradiation with 2.5 MeV protons and neutrons is investigated. Devices exhibit increase …

Irradiation-induced deep levels in silicon for power device tailoring

R Siemieniec, FJ Niedernostheide… - Journal of the …, 2005 - iopscience.iop.org
This paper gives an overview of the physics and electrical characteristics of irradiation-
induced defects in silicon created by electrons, protons, and helium ions. The parameters of …

The effect of light ion irradiation on 4H-SiC MPS power diode characteristics: Experiment and simulation

RK Sharma, P Hazdra, S Popelka - IEEE Transactions on …, 2015 - ieeexplore.ieee.org
In this article, the effect of local radiation damage on the electrical characteristics of 1700 V
4H-SiC Merged-Pin Schottky (MPS) diode have been investigated. Radiation defects …

Lifetime control in silicon power PiN diode by ion irradiation: Suppression of undesired leakage

P Hazdra, V Komarnitskyy - Microelectronics journal, 2006 - Elsevier
The irradiation with high-energy (7.35 MeV) protons through a set of energy degraders was
used to suppress leakage of the silicon power diodes subjected to local lifetime control. The …

Field Shielded Anode (FSA) concept enabling higher temperature operation of fast recovery diodes

S Matthias, J Vobecky, C Corvasce… - 2011 IEEE 23rd …, 2011 - ieeexplore.ieee.org
In this paper, we introduce the Field Shielded Anode (FSA) concept that enables higher
temperature operation of fast recovery diodes with planar junction termination. Conventional …

Numerical analysis of local lifetime control for high-speed low-loss PiN diode design

E Napoli, AGM Strollo, P Spirito - IEEE Transactions on Power …, 1999 - ieeexplore.ieee.org
The effect of localized lifetime control technique on the static and dynamic behavior of a
power PiN diode is investigated in this paper. Mixed mode device circuit simulations are …

Divacancy profiles in MeV helium irradiated silicon from reverse I–V measurement

P Hazdra, J Rubeš, J Vobecký - … and Methods in Physics Research Section …, 1999 - Elsevier
The application of high-voltage reverse current to voltage characteristics for characterization
of ultra-deep radiation defect profiles in ion irradiated silicon pin diodes is presented …

New 1700V SPT+ IGBT and diode chip set with 175 C operating junction temperature

C Corvasce, A Kopta, J Vobecky… - Proceedings of the …, 2011 - ieeexplore.ieee.org
In this paper we present a newly developed 1700V IGBT and diode chip set generation with
optimized performances for 175° C junction temperature operations. The planar 1700V IGBT …