Exploring the potential of semiconducting BaSi2 for thin-film solar cell applications

T Suemasu, N Usami - Journal of Physics D: Applied Physics, 2016 - iopscience.iop.org
Abstract Semiconducting barium disilicide (BaSi 2), which is composed of earth-abundant
elements, has attractive features for thin-film solar cell applications. Both a large absorption …

Exploring the possibility of semiconducting BaSi2 for thin-film solar cell applications

T Suemasu - Japanese Journal of Applied Physics, 2015 - iopscience.iop.org
Semiconducting BaSi 2 has attractive features for thin-film solar cell applications because
both a large absorption coefficient and a long minority-carrier diffusion length can be …

BaSi2 as a promising low-cost, earth-abundant material with large optical activity for thin-film solar cells: A hybrid density functional study

M Kumar, N Umezawa, M Imai - Applied Physics Express, 2014 - iopscience.iop.org
Employing a hybrid density functional theory, we reveal the origin of the large absorption
coefficient in BaSi 2, which is roughly two to eighty times larger at ħω− E g= 0.5 eV than …

Impact of Ba to Si deposition rate ratios during molecular beam epitaxy on carrier concentration and spectral response of BaSi2 epitaxial films

R Takabe, T Deng, K Kodama, Y Yamashita… - Journal of applied …, 2018 - pubs.aip.org
Undoped 0.5-μm-thick BaSi 2 epitaxial films were grown on Si (111) substrates with various
ratios of the Ba deposition rate to the Si deposition rate (R Ba/R Si) ranging from 1.0 to 5.1 …

Investigation of the recombination mechanism of excess carriers in undoped BaSi2 films on silicon

KO Hara, N Usami, K Toh, M Baba, K Toko… - Journal of applied …, 2012 - pubs.aip.org
Excess-carrier recombination mechanisms in undoped BaSi 2 epitaxial films grown by
molecular beam epitaxy on n-type silicon substrates have been studied by the microwave …

In-situ heavily p-type doping of over 1020 cm− 3 in semiconducting BaSi2 thin films for solar cells applications

M Ajmal Khan, KO Hara, W Du, M Baba… - Applied physics …, 2013 - pubs.aip.org
B-doped p-BaSi 2 layer growth by molecular beam epitaxy and the influence of rapid
thermal annealing (RTA) on hole concentrations were presented. The hole concentration …

Simple way of finding Ba to Si deposition rate ratios for high photoresponsivity in BaSi2 films by Raman spectroscopy

Y Yamashita, Y Takahara, T Sato, K Toko… - Applied Physics …, 2019 - iopscience.iop.org
Since the photoresponsivity of BaSi 2 is sensitive to a Ba-to-Si deposition rate ratio (R Ba/R
Si), there is a need to determine the optimum value of R Ba/R Si. We grew 0.5 μm thick BaSi …

(Sr, Ba)(Si, Ge) 2 for thin-film solar-cell applications: first-principles study

M Kumar, N Umezawa, M Imai - Journal of Applied Physics, 2014 - pubs.aip.org
In order to meet the increasing demand for electric power generation from solar energy
conversion, the development of efficient light absorber materials has been awaited. To this …

Spectroscopic evidence of photogenerated carrier separation by built-in electric field in Sb-doped n-BaSi2/B-doped p-BaSi2 homojunction diodes

K Kodama, R Takabe, T Deng, K Toko… - Japanese Journal of …, 2018 - iopscience.iop.org
The operation of a BaSi 2 homojunction solar cell is first demonstrated. In n+-BaSi 2 (20
nm)/p-BaSi 2 (500 nm)/p+-BaSi 2 (50 nm) homojunction diodes on p+-Si (111)(resistivity ρ< …

Realization of single-phase BaSi2 films by vacuum evaporation with suitable optical properties and carrier lifetime for solar cell applications

KO Hara, Y Nakagawa, T Suemasu… - Japanese Journal of …, 2015 - iopscience.iop.org
We have realized BaSi 2 films by a simple vacuum evaporation technique for solar cell
applications. X-ray diffraction analysis shows that single-phase BaSi 2 films are formed on …