The phenomenon of swelling (surface expansion) in low-energy self-ion implanted silicon
has been investigated using atomic force microscopy and transmission electron microscopy …

The distribution of defects in Si (100),(110), and (111) after boron implantation and
annealing processes was measured by means of different methods. Boron implantation was …

Abstract Range profiles of 50-and 100-keV Si+ 30 ions implanted into Si (100) at room
temperature with doses from 2× 10 16 to 1× 10 18 ions cm− 2, and of 2× 10 16 50-keV Si+ …

The x‐ray rocking curve analysis was used to investigate damage accumulation with
increasing dose in silicon implanted with 50 keV and 1 MeV 11B+ ions, and 50 keV, 180 …

The damage produced by implanting, at room temperature, 3-μm-thick relaxed Si 1− x Ge x
alloys of high crystalline quality with 2 MeV Si+ ions has been studied as a function of Ge …

Hydrogen implanted silicon has been studied using high resolution X-ray scattering. Strain
induced by implantation has been measured as a function of implantation dose. The …

We review here the possibilities opened by a recent development of the Monte Carlo binary
collision approximation (MC-BCA) simulation of Rutherford backscattering spectrometry …

Many reports1–7 are available in the literature dealing with different aspects of defects
induced in semiconductors by charged particles with energies varying from a few keV to a …

Weakly damaged〈 100〉,〈 110〉 and〈 111〉 Si layers produced by multiple implantation of
B+ ions at room temperature with energies between 50 and 300 keV at various fluences are …

The damage produced by implanting, at room temperature, 3 μm thick relaxed Si1− xGex
layers with 2 MeV Si+ ions has been measured as a function of Ge content (x= 0.04, 0.13 …